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Liang, X. F., Chen, Y., Chen, L., Yin, J., Liu, Z. G. (2007) Electric switching and memory devices made from RbAg4I5 films. Applied Physics Letters, 90 (2). 22508pp. doi:10.1063/1.2431438

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Reference TypeJournal (article/letter/editorial)
TitleElectric switching and memory devices made from RbAg4I5 films
JournalApplied Physics Letters
AuthorsLiang, X. F.Author
Chen, Y.Author
Chen, L.Author
Yin, J.Author
Liu, Z. G.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2431438Search in ResearchGate
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Mindat Ref. ID8554072Long-form Identifiermindat:1:5:8554072:1
GUID0
Full ReferenceLiang, X. F., Chen, Y., Chen, L., Yin, J., Liu, Z. G. (2007) Electric switching and memory devices made from RbAg4I5 films. Applied Physics Letters, 90 (2). 22508pp. doi:10.1063/1.2431438
Plain TextLiang, X. F., Chen, Y., Chen, L., Yin, J., Liu, Z. G. (2007) Electric switching and memory devices made from RbAg4I5 films. Applied Physics Letters, 90 (2). 22508pp. doi:10.1063/1.2431438
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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