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Huang, Jidong, Fu, Jia, Zhu, Chunxiang, Tay, Andrew A. O., Cheng, Zhi-Yuan, Leitz, Chris W., Lochtefeld, Anthony (2007) A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric. Applied Physics Letters, 90 (2). 23502pp. doi:10.1063/1.2431464

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Reference TypeJournal (article/letter/editorial)
TitleA Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
JournalApplied Physics Letters
AuthorsHuang, JidongAuthor
Fu, JiaAuthor
Zhu, ChunxiangAuthor
Tay, Andrew A. O.Author
Cheng, Zhi-YuanAuthor
Leitz, Chris W.Author
Lochtefeld, AnthonyAuthor
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2431464Search in ResearchGate
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Mindat Ref. ID8554087Long-form Identifiermindat:1:5:8554087:3
GUID0
Full ReferenceHuang, Jidong, Fu, Jia, Zhu, Chunxiang, Tay, Andrew A. O., Cheng, Zhi-Yuan, Leitz, Chris W., Lochtefeld, Anthony (2007) A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric. Applied Physics Letters, 90 (2). 23502pp. doi:10.1063/1.2431464
Plain TextHuang, Jidong, Fu, Jia, Zhu, Chunxiang, Tay, Andrew A. O., Cheng, Zhi-Yuan, Leitz, Chris W., Lochtefeld, Anthony (2007) A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric. Applied Physics Letters, 90 (2). 23502pp. doi:10.1063/1.2431464
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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