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Mei, J., Ponce, F. A., Fareed, R. S. Qhalid, Yang, J. W., Khan, M. Asif (2007) Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates. Applied Physics Letters, 90 (22). 221909pp. doi:10.1063/1.2745207

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Reference TypeJournal (article/letter/editorial)
TitleDislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates
JournalApplied Physics Letters
AuthorsMei, J.Author
Ponce, F. A.Author
Fareed, R. S. QhalidAuthor
Yang, J. W.Author
Khan, M. AsifAuthor
Year2007 (May 28)Volume90
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2745207Search in ResearchGate
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Mindat Ref. ID8554382Long-form Identifiermindat:1:5:8554382:5
GUID0
Full ReferenceMei, J., Ponce, F. A., Fareed, R. S. Qhalid, Yang, J. W., Khan, M. Asif (2007) Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates. Applied Physics Letters, 90 (22). 221909pp. doi:10.1063/1.2745207
Plain TextMei, J., Ponce, F. A., Fareed, R. S. Qhalid, Yang, J. W., Khan, M. Asif (2007) Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates. Applied Physics Letters, 90 (22). 221909pp. doi:10.1063/1.2745207
In(2007, May) Applied Physics Letters Vol. 90 (22) AIP Publishing

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