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Dahal, R., Al Tahtamouni, T. M., Fan, Z. Y., Lin, J. Y., Jiang, H. X. (2007) Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors. Applied Physics Letters, 90 (26). 263505pp. doi:10.1063/1.2752126

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Reference TypeJournal (article/letter/editorial)
TitleHybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors
JournalApplied Physics Letters
AuthorsDahal, R.Author
Al Tahtamouni, T. M.Author
Fan, Z. Y.Author
Lin, J. Y.Author
Jiang, H. X.Author
Year2007 (June 25)Volume90
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.2752126Search in ResearchGate
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Mindat Ref. ID8554803Long-form Identifiermindat:1:5:8554803:3
GUID0
Full ReferenceDahal, R., Al Tahtamouni, T. M., Fan, Z. Y., Lin, J. Y., Jiang, H. X. (2007) Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors. Applied Physics Letters, 90 (26). 263505pp. doi:10.1063/1.2752126
Plain TextDahal, R., Al Tahtamouni, T. M., Fan, Z. Y., Lin, J. Y., Jiang, H. X. (2007) Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors. Applied Physics Letters, 90 (26). 263505pp. doi:10.1063/1.2752126
In(2007, June) Applied Physics Letters Vol. 90 (26) AIP Publishing

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Dahal, R., Al Tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2007) AlN avalanche photodetectors. Applied Physics Letters, 91 (24). 243503pp. doi:10.1063/1.2823588
Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2012) High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors. Applied Physics Letters, 101 (19). 192106pp. doi:10.1063/1.4766732
Dahal, R., Li, J., Fan, Z. Y., Nakarmi, M. L., Tahtamouni, T. M. Al, Lin, J. Y., Jiang, H. X. (2008) AlN MSM and Schottky photodetectors. physica status solidi (c), 5 (6). 2148-2151 doi:10.1002/pssc.200778489
Li, J., Fan, Z. Y., Dahal, R., Nakarmi, M. L, Lin, J. Y., Jiang, H. X. (2006) 200nm deep ultraviolet photodetectors based on AlN. Applied Physics Letters, 89 (21). 213510pp. doi:10.1063/1.2397021
Al Tahtamouni, T. M., Sedhain, A., Lin, J. Y., Jiang, H. X. (2007) Growth and photoluminescence studies of a-plane AlN∕AlxGa1−xN quantum wells. Applied Physics Letters, 90 (22). 221105pp. doi:10.1063/1.2743956
Nikishin, S., Borisov, B., Pandikunta, M., Dahal, R., Lin, J. Y., Jiang, H. X., Harris, H., Holtz, M. (2009) High quality AlN for deep UV photodetectors. Applied Physics Letters, 95 (5). 54101pp. doi:10.1063/1.3200229
Sedhain, A., Al Tahtamouni, T. M., Li, J., Lin, J. Y., Jiang, H. X. (2008) Beryllium acceptor binding energy in AlN. Applied Physics Letters, 93 (14). 141104pp. doi:10.1063/1.2996977
Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2012) Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells. Applied Physics Letters, 101 (4). 42103pp. doi:10.1063/1.4737941
Sedhain, A., Nepal, N., Nakarmi, M. L., Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X., Gu, Z., Edgar, J. H. (2008) Photoluminescence properties of AlN homoepilayers with different orientations. Applied Physics Letters, 93 (4). 41905pp. doi:10.1063/1.2965613
Pantha, B. N., Nepal, N., Al Tahtamouni, T. M., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2007) Correlation between biaxial stress and free exciton transition in AlN epilayers. Applied Physics Letters, 91 (12). 121117pp. doi:10.1063/1.2789182
Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2013) Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes. Journal of Applied Physics, 113 (12). 123501pp. doi:10.1063/1.4798239
 
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