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Liu, D., Tse, K., Robertson, J. (2007) Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7. Applied Physics Letters, 90 (6). 62901pp. doi:10.1063/1.2433031

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure and defects of high dielectric constant gate oxide La2Hf2O7
JournalApplied Physics Letters
AuthorsLiu, D.Author
Tse, K.Author
Robertson, J.Author
Year2007 (February 5)Volume90
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.2433031Search in ResearchGate
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Mindat Ref. ID8555215Long-form Identifiermindat:1:5:8555215:1
GUID0
Full ReferenceLiu, D., Tse, K., Robertson, J. (2007) Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7. Applied Physics Letters, 90 (6). 62901pp. doi:10.1063/1.2433031
Plain TextLiu, D., Tse, K., Robertson, J. (2007) Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7. Applied Physics Letters, 90 (6). 62901pp. doi:10.1063/1.2433031
In(2007, February) Applied Physics Letters Vol. 90 (6) AIP Publishing

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