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Geelhaar, L., Galluppi, M., Averbeck, R., Jaschke, G., Riechert, H. (2007) Annealing of InGaAsN quantum wells in hydrogen. Applied Physics Letters, 90 (7). 71913pp. doi:10.1063/1.2695645

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing of InGaAsN quantum wells in hydrogen
JournalApplied Physics Letters
AuthorsGeelhaar, L.Author
Galluppi, M.Author
Averbeck, R.Author
Jaschke, G.Author
Riechert, H.Author
Year2007 (February 12)Volume90
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2695645Search in ResearchGate
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Mindat Ref. ID8555422Long-form Identifiermindat:1:5:8555422:9
GUID0
Full ReferenceGeelhaar, L., Galluppi, M., Averbeck, R., Jaschke, G., Riechert, H. (2007) Annealing of InGaAsN quantum wells in hydrogen. Applied Physics Letters, 90 (7). 71913pp. doi:10.1063/1.2695645
Plain TextGeelhaar, L., Galluppi, M., Averbeck, R., Jaschke, G., Riechert, H. (2007) Annealing of InGaAsN quantum wells in hydrogen. Applied Physics Letters, 90 (7). 71913pp. doi:10.1063/1.2695645
In(2007, February) Applied Physics Letters Vol. 90 (7) AIP Publishing

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Geelhaar, L., Galluppi, M., Jaschke, G., Averbeck, R., Riechert, H., Remmele, T., Albrecht, M., Dworzak, M., Hildebrant, R., Hoffmann, A. (2006) Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells. Applied Physics Letters, 88 (1). 11903pp. doi:10.1063/1.2159566
Galluppi, Massimo, Geelhaar, Lutz, Riechert, Henning (2005) Nitrogen and indium dependence of the band offsets in InGaAsN quantum wells. Applied Physics Letters, 86 (13). 131925pp. doi:10.1063/1.1898441
Jaschke, G., Averbeck, R., Geelhaar, L., Riechert, H. (2005) Low threshold InGaAsN/GaAs lasers beyond 1500nm. Journal of Crystal Growth, 278 (1). 224-228 doi:10.1016/j.jcrysgro.2004.12.059
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Rubel, O., Galluppi, M., Baranovskii, S. D., Volz, K., Geelhaar, L., Riechert, H., Thomas, P., Stolz, W. (2005) Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy. Journal of Applied Physics, 98 (6). 63518pp. doi:10.1063/1.2058192
Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H. (2011) Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 98 (7). 71913pp. doi:10.1063/1.3555450
Albrecht, M., Grillo, V., Remmele, T., Strunk, H. P., Egorov, A. Yu., Dumitras, Gh., Riechert, H., Kaschner, A., Heitz, R., Hoffmann, A. (2002) Effect of annealing on the In and N distribution in InGaAsN quantum wells. Applied Physics Letters, 81 (15). 2719-2721 doi:10.1063/1.1509122
Grillo, V., Albrecht, M., Remmele, T., Strunk, H. P., Egorov, A. Yu., Riechert, H. (2001) Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells. Journal of Applied Physics, 90 (8). 3792-3798 doi:10.1063/1.1402139
Koblmueller, G., Averbeck, R., Geelhaar, L., Riechert, H., Hösler, W., Pongratz, P. (2003) Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy. Journal of Applied Physics, 93 (12). 9591-9596 doi:10.1063/1.1575929
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