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Soares, G. V., Baumvol, I. J. R., Radtke, C., Stedile, F. C. (2007) Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures. Applied Physics Letters, 90 (8). 81906pp. doi:10.1063/1.2645341

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures
JournalApplied Physics Letters
AuthorsSoares, G. V.Author
Baumvol, I. J. R.Author
Radtke, C.Author
Stedile, F. C.Author
Year2007 (February 19)Volume90
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.2645341Search in ResearchGate
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Mindat Ref. ID8555469Long-form Identifiermindat:1:5:8555469:0
GUID0
Full ReferenceSoares, G. V., Baumvol, I. J. R., Radtke, C., Stedile, F. C. (2007) Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures. Applied Physics Letters, 90 (8). 81906pp. doi:10.1063/1.2645341
Plain TextSoares, G. V., Baumvol, I. J. R., Radtke, C., Stedile, F. C. (2007) Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures. Applied Physics Letters, 90 (8). 81906pp. doi:10.1063/1.2645341
In(2007, February) Applied Physics Letters Vol. 90 (8) AIP Publishing

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Soares, G. V., Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2006) Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth. Applied Physics Letters, 88 (4). 41901pp. doi:10.1063/1.2167608
Radtke, C., Stedile, F. C., Soares, G. V., Krug, C., da Rosa, E. B. O., Driemeier, C., Baumvol, I. J. R., Pezzi, R. P. (2008) Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92 (25). 252909pp. doi:10.1063/1.2945643
Soares, G. V., Baumvol, I. J. R., Hold, L., Kong, F., Han, J., Dimitrijev, S., Radtke, C., Stedile, F. C. (2007) Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics. Applied Physics Letters, 91 (4). 41906pp. doi:10.1063/1.2763966
McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., Baumvol, I. J. R., Radtke, C. (2000) Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters, 76 (5). 568-570 doi:10.1063/1.125819
Soares, G. V., Baumvol, I. J. R., Corrêa, S. A., Radtke, C., Stedile, F. C. (2009) Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si. Applied Physics Letters, 95 (19). 191912pp. doi:10.1063/1.3262971
Corrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C. (2009) Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC. Applied Physics Letters, 94 (25). 251909pp. doi:10.1063/1.3159812
Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
Corrêa, S. A., Marmitt, G. G., Bom, N. M., da Rosa, A. T., Stedile, F. C., Radtke, C., Soares, G. V., Baumvol, I. J. R., Krug, C., Gobbi, A. L. (2009) Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC. Applied Physics Letters, 95 (5). 51916pp. doi:10.1063/1.3195702
Pitthan, E., Corrêa, S. A., Soares, G. V., Boudinov, H. I., Stedile, F. C. (2014) SiO2/SiC structures annealed in D218O: Compositional and electrical effects. Applied Physics Letters, 104 (11). 111904pp. doi:10.1063/1.4869124
Radtke, C., Baumvol, I. J. R., Morais, J., Stedile, F. C. (2001) Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies. Applied Physics Letters, 78 (23). 3601-3603 doi:10.1063/1.1374518
Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2002) Effects of ion irradiation in the thermal oxidation of SiC. Physical Review B, 66 (15) doi:10.1103/physrevb.66.155437
 
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