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Riposan, A., Mirecki Millunchick, J., Pearson, Chris (2007) Critical film thickness dependence on As flux in In0.27Ga0.73As∕GaAs(001) films. Applied Physics Letters, 90 (9). 91902pp. doi:10.1063/1.2476259

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Reference TypeJournal (article/letter/editorial)
TitleCritical film thickness dependence on As flux in In0.27Ga0.73As∕GaAs(001) films
JournalApplied Physics Letters
AuthorsRiposan, A.Author
Mirecki Millunchick, J.Author
Pearson, ChrisAuthor
Year2007 (February 26)Volume90
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2476259Search in ResearchGate
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Mindat Ref. ID8555532Long-form Identifiermindat:1:5:8555532:5
GUID0
Full ReferenceRiposan, A., Mirecki Millunchick, J., Pearson, Chris (2007) Critical film thickness dependence on As flux in In0.27Ga0.73As∕GaAs(001) films. Applied Physics Letters, 90 (9). 91902pp. doi:10.1063/1.2476259
Plain TextRiposan, A., Mirecki Millunchick, J., Pearson, Chris (2007) Critical film thickness dependence on As flux in In0.27Ga0.73As∕GaAs(001) films. Applied Physics Letters, 90 (9). 91902pp. doi:10.1063/1.2476259
In(2007, February) Applied Physics Letters Vol. 90 (9) AIP Publishing

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Millunchick, J. Mirecki, Riposan, A., Dall, B. J., Pearson, Chris, Orr, B. G. (2003) Surface reconstructions of In-enriched InGaAs alloys. Applied Physics Letters, 83 (7). 1361-1363 doi:10.1063/1.1602557
Riposan, A., Martin, G.K.M., Bouville, M., Falk, M.L., Mirecki Millunchick, J. (2003) The effect of island density on pit nucleation in In0.27Ga0.73As/GaAs films. Surface Science, 525 (1). 222-228 doi:10.1016/s0039-6028(02)02563-3
Riposan, A., Martin, G. K. M., Millunchick, J. Mirecki (2003) Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers. Applied Physics Letters, 83 (22). 4518-4520 doi:10.1063/1.1631053
Mirecki Millunchick, J., Riposan, A., Dall, B.J., Pearson, Chris, Orr, B.G. (2004) Surface reconstructions of InGaAs alloys. Surface Science, 550 (1). 1-7 doi:10.1016/j.susc.2004.01.003
Bickel, J.E., Pearson, Chris, Millunchick, J. Mirecki (2009) Sb incorporation at GaAs(001)-(2×4) surfaces. Surface Science, 603 (1). 14-21 doi:10.1016/j.susc.2008.09.042
Lee, Jennifer Y., Pearson, Chris, Millunchick, Joanna M. (2008) Arsenic dependence on the morphology of ultrathin GaAs layers on In0.53Ga0.47As∕InP(001). Journal of Applied Physics, 103 (10). 104309pp. doi:10.1063/1.2917276
Chokshi, Nehal S., Mirecki Millunchick, Joanna (2000) Cooperative nucleation leading to ripple formation in InGaAs/GaAs films. Applied Physics Letters, 76 (17). 2382-2384 doi:10.1063/1.126353
Millunchick, J. Mirecki, Barnett, S. A. (1994) Suppression of strain relaxation and roughening of InGaAs on GaAs using ion‐assisted molecular beam epitaxy. Applied Physics Letters, 65 (9). 1136-1138 doi:10.1063/1.112951
Pérez Rodríguez, B., Mirecki Millunchick, J. (2006) Dislocation dynamics in strain relaxation in GaAsSb∕GaAs heteroepitaxy. Journal of Applied Physics, 100 (4). 44503pp. doi:10.1063/1.2245206
Dorin, C., Mirecki Millunchick, J., Chen, Y., Orr, B. G., Pearson, C. A. (2001) Lateral composition modulation in short period superlattices: The role of growth mode. Applied Physics Letters, 79 (25). 4118-4120 doi:10.1063/1.1425452
Pearson, Chris, Dorin, C., Millunchick, J. Mirecki, Orr, B. G. (2004) Imaging the Evolution of Lateral Composition Modulation in Strained Alloy Superlattices. Physical Review Letters, 92 (5). doi:10.1103/physrevlett.92.056101
 
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