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Freitas, Jaime A., Rowland, Larry B., Kim, Jihyun, Fatemi, Mohammad (2007) Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters, 90 (9). 91910pp. doi:10.1063/1.2709512

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Reference TypeJournal (article/letter/editorial)
TitleProperties of epitaxial GaN on refractory metal substrates
JournalApplied Physics Letters
AuthorsFreitas, Jaime A.Author
Rowland, Larry B.Author
Kim, JihyunAuthor
Fatemi, MohammadAuthor
Year2007 (February 26)Volume90
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2709512Search in ResearchGate
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Mindat Ref. ID8555547Long-form Identifiermindat:1:5:8555547:7
GUID0
Full ReferenceFreitas, Jaime A., Rowland, Larry B., Kim, Jihyun, Fatemi, Mohammad (2007) Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters, 90 (9). 91910pp. doi:10.1063/1.2709512
Plain TextFreitas, Jaime A., Rowland, Larry B., Kim, Jihyun, Fatemi, Mohammad (2007) Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters, 90 (9). 91910pp. doi:10.1063/1.2709512
In(2007, February) Applied Physics Letters Vol. 90 (9) AIP Publishing

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Maximenko, Serguei I., Freitas, Jaime A., Mittereder, Jeffrey A., Rowland, Larry B., Kim, Jihyun (2008) Defects limiting performance of devices fabricated on GaN/metal heterostructure. Applied Physics Letters, 92 (21). 212104pp. doi:10.1063/1.2936995
Murthy, Madhu, Freitas, Jaime A., Kim, Jihyun, Glaser, Evan R., Storm, David (2007) Residual impurities in GaN substrates and epitaxial layers grown by various techniques. Journal of Crystal Growth, 305 (2). 393-398 doi:10.1016/j.jcrysgro.2007.03.029
Sakurada, Kento, Kobayashi, Atsushi, Kawaguchi, Yuji, Ohta, Jitsuo, Fujioka, Hiroshi (2007) Low temperature epitaxial growth of GaN films on LiGaO2 substrates. Applied Physics Letters, 90 (21). 211913pp. doi:10.1063/1.2737928
Kim, Hong-Yeol, Freitas, Jaime A., Kim, Jihyun (2011) Probing proton irradiation effects in GaN by micro-Raman spectroscopy. EPL (Europhysics Letters), 96. 26004pp. doi:10.1209/0295-5075/96/26004
Jung, Younghun, Wang, Xiaotie, Kim, Jiwan, Hyun Kim, Sung, Ren, Fan, Pearton, Stephen J., Kim, Jihyun (2012) GaN-based light-emitting diodes on origami substrates. Applied Physics Letters, 100 (23). 231113pp. doi:10.1063/1.4726123
Kobayashi, Atsushi, Kawano, Satoshi, Kawaguchi, Yuji, Ohta, Jitsuo, Fujioka, Hiroshi (2007) Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates. Applied Physics Letters, 90 (4). 41908pp. doi:10.1063/1.2433758
Fatemi, M., Wickenden, A. E., Koleske, D. D., Twigg, M. E., Freitas, J. A., Henry, R. L., Gorman, R. J. (1998) Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates. Applied Physics Letters, 73 (5). 608-610 doi:10.1063/1.121871
Kim, Sang-Woo, Park, Hyun-Kyu, Yi, Min-Su, Park, Nae-Man, Park, Jong-Hyurk, Kim, Sang-Hyeob, Maeng, Sung-Lyul, Choi, Chel-Jong, Moon, Seung-Eon (2007) Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates. Applied Physics Letters, 90 (3). 33107pp. doi:10.1063/1.2430918
Nahhas, Ahmed, Kim, Hong Koo, Blachere, Jean (2001) Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer. Applied Physics Letters, 78 (11). 1511-1513 doi:10.1063/1.1355296
Freitas, Jaime A., Nam, Ok-Hyun, Davis, Robert F., Saparin, Gennady V., Obyden, Sergey K. (1998) Optical characterization of lateral epitaxial overgrown GaN layers. Applied Physics Letters, 72 (23). 2990-2992 doi:10.1063/1.121517
Freitas, Jaime A., Culbertson, James C., Storm, David F., Mahadik, Nadeemullah A., Nepal, Neeraj, Anderson, Travis J. (2025) Structural and optical properties of cubic GaN films on high-thermal conductivity substrates. Journal of Applied Physics, 137 (3). doi:10.1063/5.0204660
 
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