Van Gestel, D., Romero, M. J., Gordon, I., Carnel, L., D’Haen, J., Beaucarne, G., Al-Jassim, M., Poortmans, J. (2007) Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy. Applied Physics Letters, 90 (9). 92103pp. doi:10.1063/1.2709643

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Reference Type	Journal (article/letter/editorial)
Title	Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
Journal	Applied Physics Letters
Authors	Van Gestel, D.		Author
	Romero, M. J.		Author
	Gordon, I.		Author
	Carnel, L.		Author
	D’Haen, J.		Author
	Beaucarne, G.		Author
	Al-Jassim, M.		Author
	Poortmans, J.		Author
Year	2007 (February 26)	Volume	90
Issue	9
Publisher	AIP Publishing
DOI	doi:10.1063/1.2709643Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8555562	Long-form Identifier	mindat:1:5:8555562:6
GUID	0
Full Reference	Van Gestel, D., Romero, M. J., Gordon, I., Carnel, L., D’Haen, J., Beaucarne, G., Al-Jassim, M., Poortmans, J. (2007) Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy. Applied Physics Letters, 90 (9). 92103pp. doi:10.1063/1.2709643
Plain Text	Van Gestel, D., Romero, M. J., Gordon, I., Carnel, L., D’Haen, J., Beaucarne, G., Al-Jassim, M., Poortmans, J. (2007) Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy. Applied Physics Letters, 90 (9). 92103pp. doi:10.1063/1.2709643
In	(2007, February) Applied Physics Letters Vol. 90 (9) AIP Publishing

	Van Gestel, Dries, Gordon, Ivan, Bender, Hugo, Saurel, Damien, Vanacken, Johan, Beaucarne, Guy, Poortmans, Jef (2009) Intragrain defects in polycrystalline silicon layers grown by aluminum-induced crystallization and epitaxy for thin-film solar cells. Journal of Applied Physics, 105 (11). 114507pp. doi:10.1063/1.3117838
	Carnel, L., Gordon, I., Van Gestel, D., Beaucarne, G., Poortmans, J., Stesmans, A. (2006) High open-circuit voltage values on fine-grained thin-film polysilicon solar cells. Journal of Applied Physics, 100 (6). 63702pp. doi:10.1063/1.2337385
	*Van Gestel, D., Gordon, I., Poortmans, J. (2011) Metal induced crystallization of amorphous silicon for photovoltaic solar cells. Physics Procedia, 11. 196-199 doi:10.1016/j.phpro.2011.01.003*
	Dross, F., Robbelein, J., Vandevelde, B., Van Kerschaver, E., Gordon, I., Beaucarne, G., Poortmans, J. (2007) Stress-induced large-area lift-off of crystalline Si films. Applied Physics A, 89. 149-152 doi:10.1007/s00339-007-4195-2
	Jiang, C.-S., Moutinho, H. R., Romero, M. J., Al-Jassim, M. M., Kazmerski, L. L. (2006) Electrical charge trapping at defects on the Si(111)7×7 surface. Applied Physics Letters, 88 (6). 61909pp. doi:10.1063/1.2172229
	Martini, R., Kepa, J., Debucquoy, M., Depauw, V., Gonzalez, M., Gordon, I., Stesmans, A., Poortmans, J. (2014) Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells. Applied Physics Letters, 105 (17). 173906pp. doi:10.1063/1.4901026
	Dekkers, H. F. W., Carnel, L., Beaucarne, G. (2006) Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers. Applied Physics Letters, 89 (1). 13508pp. doi:10.1063/1.2219142
	Nieuwenhuysen, K. Van, Duerinckx, F., Kuzma, I., Gestel, D. van, Beaucarne, G., Poortmans, J. (2006) Progress in epitaxial deposition on low-cost substrates for thin-film crystalline silicon solar cells at IMEC. Journal of Crystal Growth, 287 (2). 438-441 doi:10.1016/j.jcrysgro.2005.11.060
	Romero, M. J., Alberi, K., Martin, I. T., Jones, K. M., Young, D. L., Yan, Y., Teplin, C., Al-Jassim, M. M., Stradins, P., Branz, H. M. (2010) Nanoscale measurements of local junction breakdown in epitaxial film silicon solar cells. Applied Physics Letters, 97 (9). 92107pp. doi:10.1063/1.3479534
	Jiang, C.-S., Friedman, D. J., Geisz, J. F., Moutinho, H. R., Romero, M. J., Al-Jassim, M. M. (2003) Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells. Applied Physics Letters, 83 (8). 1572-1574 doi:10.1063/1.1602575
	Wang, K. L., Li, G. P., Sigmon, T. W. (1981) Electrical properties of single‐crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy. Applied Physics Letters, 39 (9). 709-711 doi:10.1063/1.92857

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