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Huang, Rui, Chen, Kunji, Dong, Hengping, Wang, Danqing, Ding, Honglin, Li, Wei, Xu, Jun, Ma, Zhongyuan, Xu, Ling (2007) Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si∕N ratio. Applied Physics Letters, 91 (11). 111104pp. doi:10.1063/1.2783271

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si∕N ratio
JournalApplied Physics Letters
AuthorsHuang, RuiAuthor
Chen, KunjiAuthor
Dong, HengpingAuthor
Wang, DanqingAuthor
Ding, HonglinAuthor
Li, WeiAuthor
Xu, JunAuthor
Ma, ZhongyuanAuthor
Xu, LingAuthor
Year2007 (September 10)Volume91
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2783271Search in ResearchGate
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Mindat Ref. ID8555874Long-form Identifiermindat:1:5:8555874:8
GUID0
Full ReferenceHuang, Rui, Chen, Kunji, Dong, Hengping, Wang, Danqing, Ding, Honglin, Li, Wei, Xu, Jun, Ma, Zhongyuan, Xu, Ling (2007) Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si∕N ratio. Applied Physics Letters, 91 (11). 111104pp. doi:10.1063/1.2783271
Plain TextHuang, Rui, Chen, Kunji, Dong, Hengping, Wang, Danqing, Ding, Honglin, Li, Wei, Xu, Jun, Ma, Zhongyuan, Xu, Ling (2007) Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si∕N ratio. Applied Physics Letters, 91 (11). 111104pp. doi:10.1063/1.2783271
In(2007, September) Applied Physics Letters Vol. 91 (11) AIP Publishing


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