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Mandalapu, L. J., Yang, Z., Liu, J. L. (2007) Erratum: “Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO” [Appl. Phys. Lett. 90, 252103 (2007)]. Applied Physics Letters, 91 (14). 149903pp. doi:10.1063/1.2795077

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO” [Appl. Phys. Lett. 90, 252103 (2007)]
JournalApplied Physics Letters
AuthorsMandalapu, L. J.Author
Yang, Z.Author
Liu, J. L.Author
Year2007 (October)Volume91
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2795077Search in ResearchGate
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Mindat Ref. ID8556329Long-form Identifiermindat:1:5:8556329:0
GUID0
Full ReferenceMandalapu, L. J., Yang, Z., Liu, J. L. (2007) Erratum: “Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO” [Appl. Phys. Lett. 90, 252103 (2007)]. Applied Physics Letters, 91 (14). 149903pp. doi:10.1063/1.2795077
Plain TextMandalapu, L. J., Yang, Z., Liu, J. L. (2007) Erratum: “Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO” [Appl. Phys. Lett. 90, 252103 (2007)]. Applied Physics Letters, 91 (14). 149903pp. doi:10.1063/1.2795077
In(2007, October) Applied Physics Letters Vol. 91 (14) AIP Publishing

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Mandalapu, L. J., Yang, Z., Liu, J. L. (2007) Low-resistivity Au∕Ni Ohmic contacts to Sb-doped p-type ZnO. Applied Physics Letters, 90 (25). 252103pp. doi:10.1063/1.2750400
Mandalapu, L. J., Liu, J. L. (2007) Response to “Comment on ‘p-type behavior from Sb-doped ZnO heterojunction diodes’” [Appl. Phys. Lett. 88, 112108 (2006)]. Applied Physics Letters, 91 (13). 136102pp. doi:10.1063/1.2767222
Mandalapu, L. J., Xiu, F. X., Yang, Z., Liu, J. L. (2007) Al/Ti contacts to Sb-doped p-type ZnO. Journal of Applied Physics, 102 (2). 23716pp. doi:10.1063/1.2759874
Xiu, F. X., Liu, J. L. (2007) Response to “Comment on ‘Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy’” [Appl. Phys. Lett. 90, 116102 (2007)]. Applied Physics Letters, 90 (11). 116103pp. doi:10.1063/1.2713174
Zeng, Y. J., Ye, Z. Z. (2007) Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]. Applied Physics Letters, 90 (11). 116102pp. doi:10.1063/1.2713173
Ho Son, Jun, Won Jang, Ho, Lee, Jong-Lam (2007) Erratum: “Low-resistance and high-reflectance Ni∕Ag∕Ru∕Ni∕Au ohmic contact on p-type GaN” [Appl. Phys. Lett. 85, 4421 (2004)]. Applied Physics Letters, 90 (10). 109903pp. doi:10.1063/1.2712499
Lim, W. T., Stafford, L., Sadik, P. W., Norton, D. P., Pearton, S. J., Wang, Y. L., Ren, F. (2007) Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers. Applied Physics Letters, 90 (14). 142101pp. doi:10.1063/1.2719150
Mandalapu, L. J., Xiu, F. X., Yang, Z., Zhao, D. T., Liu, J. L. (2006) p-type behavior from Sb-doped ZnO heterojunction photodiodes. Applied Physics Letters, 88 (11). 112108pp. doi:10.1063/1.2186516
Mandalapu, L. J., Yang, Z., Chu, S., Liu, J. L. (2008) Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes. Applied Physics Letters, 92 (12). 122101pp. doi:10.1063/1.2901018
Lin, Yow-Jon, Wu, Ping-Hsun, Liu, Day-Shan (2007) Comment on “p-type behavior from Sb-doped ZnO heterojunction photodiodes” [Appl. Phys. Lett. 88, 112108 (2006)]. Applied Physics Letters, 91 (13). 136101pp. doi:10.1063/1.2767221
Chu, S., Lim, J. H., Mandalapu, L. J., Yang, Z., Li, L., Liu, J. L. (2008) Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes. Applied Physics Letters, 92 (15). 152103pp. doi:10.1063/1.2908968
 
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