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Hsiao, Ching-Lien, Liu, Ting-Wei, Wu, Chien-Ting, Hsu, Hsu-Cheng, Hsu, Geng-Ming, Chen, Li-Chyong, Shiao, Wen-Yu, Yang, C. C., Gällström, Andreas, Holtz, Per-Olof, Chen, Chia-Chun, Chen, Kuei-Hsien (2008) High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Applied Physics Letters, 92 (11). 111914pp. doi:10.1063/1.2898214

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Reference TypeJournal (article/letter/editorial)
TitleHigh-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
JournalApplied Physics Letters
AuthorsHsiao, Ching-LienAuthor
Liu, Ting-WeiAuthor
Wu, Chien-TingAuthor
Hsu, Hsu-ChengAuthor
Hsu, Geng-MingAuthor
Chen, Li-ChyongAuthor
Shiao, Wen-YuAuthor
Yang, C. C.Author
Gällström, AndreasAuthor
Holtz, Per-OlofAuthor
Chen, Chia-ChunAuthor
Chen, Kuei-HsienAuthor
Year2008 (March 17)Volume92
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2898214Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8561608Long-form Identifiermindat:1:5:8561608:8
GUID0
Full ReferenceHsiao, Ching-Lien, Liu, Ting-Wei, Wu, Chien-Ting, Hsu, Hsu-Cheng, Hsu, Geng-Ming, Chen, Li-Chyong, Shiao, Wen-Yu, Yang, C. C., Gällström, Andreas, Holtz, Per-Olof, Chen, Chia-Chun, Chen, Kuei-Hsien (2008) High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Applied Physics Letters, 92 (11). 111914pp. doi:10.1063/1.2898214
Plain TextHsiao, Ching-Lien, Liu, Ting-Wei, Wu, Chien-Ting, Hsu, Hsu-Cheng, Hsu, Geng-Ming, Chen, Li-Chyong, Shiao, Wen-Yu, Yang, C. C., Gällström, Andreas, Holtz, Per-Olof, Chen, Chia-Chun, Chen, Kuei-Hsien (2008) High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Applied Physics Letters, 92 (11). 111914pp. doi:10.1063/1.2898214
In(2008, March) Applied Physics Letters Vol. 92 (11) AIP Publishing

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