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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Cui, B., Xie, J., Osinsky, A. V., Chow, P. P., Pearton, S. J. (2008) Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures. Applied Physics Letters, 92 (4). 42110pp. doi:10.1063/1.2838734

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures
JournalApplied Physics Letters
AuthorsPolyakov, A. Y.Author
Smirnov, N. B.Author
Govorkov, A. V.Author
Yugova, T. G.Author
Markov, A. V.Author
Dabiran, A. M.Author
Wowchak, A. M.Author
Cui, B.Author
Xie, J.Author
Osinsky, A. V.Author
Chow, P. P.Author
Pearton, S. J.Author
Year2008 (January 28)Volume92
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2838734Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8565535Long-form Identifiermindat:1:5:8565535:1
GUID0
Full ReferencePolyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Cui, B., Xie, J., Osinsky, A. V., Chow, P. P., Pearton, S. J. (2008) Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures. Applied Physics Letters, 92 (4). 42110pp. doi:10.1063/1.2838734
Plain TextPolyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Cui, B., Xie, J., Osinsky, A. V., Chow, P. P., Pearton, S. J. (2008) Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures. Applied Physics Letters, 92 (4). 42110pp. doi:10.1063/1.2838734
In(2008, January) Applied Physics Letters Vol. 92 (4) AIP Publishing

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Pearton, S. J., Scherbatchev, K. D., Bublik, V. T. (2008) Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions. Journal of Applied Physics, 104 (5). 53702pp. doi:10.1063/1.2973463
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Pearton, S. J., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Kolin, N. G., Boiko, V. M., Merkurisov, D. I. (2008) Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions. Applied Physics Letters, 93 (15). 152101pp. doi:10.1063/1.3000613
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Osinsky, A. V., Cui, B., Chow, P. P., Pearton, S. J. (2007) Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors. Applied Physics Letters, 91 (23). 232116pp. doi:10.1063/1.2823607
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Osinsky, A. V., Norris, P. E., Pearton, S. J., Van Hove, J., Wowchak, A., Chow, P. (2001) Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices. Applied Physics Letters, 79 (26). 4372-4374 doi:10.1063/1.1429754
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Dabiran, Amir M., Osinsky, A. V., Pearton, S. J. (2006) Electrical and optical properties of doped p-type GaN superlattices. Applied Physics Letters, 89 (11). 112127pp. doi:10.1063/1.2354443
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Dabiran, A. M., Wowchak, A. M., Osinsky, A. V., Chow, P. P., Pearton, S. J., Shcherbatchev, K. D., Bublik, V. T. (2007) Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy. Journal of the Electrochemical Society, 154. doi:10.1149/1.2749094
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Dabiran, A. M., Chow, P. P., Wowchak, A. M., Pearton, S. J. (2010) Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy. Journal of Applied Physics, 107 (2). 23708pp. doi:10.1063/1.3285408
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Polyakov, A. Y., Markov, A. V., Mezhennyi, M. V., Govorkov, A. V., Pavlov, V. F., Smirnov, N. B., Donskov, A. A., D’yakonov, L. I., Kozlova, Y. P., Malakhov, S. S., Yugova, T. G., Osinsky, V. I., Gorokh, G. G., Lyahova, N. N., Mityukhlyaev, V. B., Pearton, S. J. (2009) Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask. Applied Physics Letters, 94 (2). 22114pp. doi:10.1063/1.3072614
 
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