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Chen, Xinman, Wu, Guangheng, Bao, Dinghua (2008) Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications. Applied Physics Letters, 93 (9). 93501pp. doi:10.1063/1.2978158

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Reference TypeJournal (article/letter/editorial)
TitleResistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications
JournalApplied Physics Letters
AuthorsChen, XinmanAuthor
Wu, GuanghengAuthor
Bao, DinghuaAuthor
Year2008 (September)Volume93
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2978158Search in ResearchGate
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Mindat Ref. ID8571877Long-form Identifiermindat:1:5:8571877:5
GUID0
Full ReferenceChen, Xinman, Wu, Guangheng, Bao, Dinghua (2008) Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications. Applied Physics Letters, 93 (9). 93501pp. doi:10.1063/1.2978158
Plain TextChen, Xinman, Wu, Guangheng, Bao, Dinghua (2008) Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications. Applied Physics Letters, 93 (9). 93501pp. doi:10.1063/1.2978158
In(2008, September) Applied Physics Letters Vol. 93 (9) AIP Publishing

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Chen, Xinman, Wu, Guangheng, Jiang, Peng, Liu, Weifang, Bao, Dinghua (2009) Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications. Applied Physics Letters, 94 (3). 33501pp. doi:10.1063/1.3073858
Hu, Wei, Chen, Xinman, Wu, Guangheng, Lin, Yanting, Qin, Ni, Bao, Dinghua (2012) Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices. Applied Physics Letters, 101 (6). 63501pp. doi:10.1063/1.4744950
Chen, Xinman, Wu, Guangheng, Hu, Wei, Zhou, Hong, Bao, Dinghua (2012) Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application. Applied Physics A, 108. 503-508 doi:10.1007/s00339-012-6924-4
Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current. Applied Physics Letters, 104 (4). 43508pp. doi:10.1063/1.4863744
Chen, Xinman, Zhou, Hong, Wu, Guangheng, Bao, Dinghua (2011) Colossal resistive switching behavior and its physical mechanism of Pt/p-NiO/n-Mg0.6Zn0.4O/Pt thin films. Applied Physics A, 104. 477-481 doi:10.1007/s00339-011-6290-7
Chen, Xinman, Hu, Wei, Li, Yan, Wu, Shuxiang, Bao, Dinghua (2016) Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device. Applied Physics Letters, 108 (5). 53504pp. doi:10.1063/1.4941287
Hao, Aize, Jia, Dianzeng, Ismail, Muhammad, Huang, Wenhua, Chen, Ruqi, Bao, Dinghua (2019) Electric field induced manipulation of resistive and magnetization switching in Pt/NiFe1.95Cr0.05O4/Pt memory devices. Applied Physics Letters, 114 (20). 203502pp. doi:10.1063/1.5091841
Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays. Journal of Alloys and Compounds, 615. 566-568 doi:10.1016/j.jallcom.2014.06.200
Chen, Xinman, Ruan, Kaibin, Wu, Guangheng, Bao, Dinghua (2008) Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO. Applied Physics Letters, 93 (11). 112112pp. doi:10.1063/1.2987514
Wang, Dongliang, Ji, Fengzhen, Chen, Xinman, Li, Yan, Ding, Baofu, Zhang, Yong (2017) Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device. Applied Physics Letters, 110 (9). 93501pp. doi:10.1063/1.4977488
Yang, Min Kyu, Park, Jae-Wan, Ko, Tae Kuk, Lee, Jeon-Kook (2009) Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices. Applied Physics Letters, 95 (4). 42105pp. doi:10.1063/1.3191674
 
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