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Seo, H. W., Tu, L. W., Lin, Y. T., Ho, C. Y., Chen, Q. Y., Yuan, L., Norman, D. P., Ho, N. J. (2009) p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance. Applied Physics Letters, 94 (20). 201907pp. doi:10.1063/1.3129191

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Reference TypeJournal (article/letter/editorial)
Titlep-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance
JournalApplied Physics Letters
AuthorsSeo, H. W.Author
Tu, L. W.Author
Lin, Y. T.Author
Ho, C. Y.Author
Chen, Q. Y.Author
Yuan, L.Author
Norman, D. P.Author
Ho, N. J.Author
Year2009 (May 18)Volume94
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3129191Search in ResearchGate
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Mindat Ref. ID8574186Long-form Identifiermindat:1:5:8574186:1
GUID0
Full ReferenceSeo, H. W., Tu, L. W., Lin, Y. T., Ho, C. Y., Chen, Q. Y., Yuan, L., Norman, D. P., Ho, N. J. (2009) p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance. Applied Physics Letters, 94 (20). 201907pp. doi:10.1063/1.3129191
Plain TextSeo, H. W., Tu, L. W., Lin, Y. T., Ho, C. Y., Chen, Q. Y., Yuan, L., Norman, D. P., Ho, N. J. (2009) p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance. Applied Physics Letters, 94 (20). 201907pp. doi:10.1063/1.3129191
In(2009, May) Applied Physics Letters Vol. 94 (20) AIP Publishing

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