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Liu, Min-Ling, Huang, Fu-Qiang, Chen, Li-Dong, Chen, I-Wei (2009) A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se). Applied Physics Letters, 94 (20). 202103pp. doi:10.1063/1.3130718

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Reference TypeJournal (article/letter/editorial)
TitleA wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)
JournalApplied Physics Letters
AuthorsLiu, Min-LingAuthor
Huang, Fu-QiangAuthor
Chen, Li-DongAuthor
Chen, I-WeiAuthor
Year2009 (May 18)Volume94
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3130718Search in ResearchGate
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Mindat Ref. ID8574189Long-form Identifiermindat:1:5:8574189:8
GUID0
Full ReferenceLiu, Min-Ling, Huang, Fu-Qiang, Chen, Li-Dong, Chen, I-Wei (2009) A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se). Applied Physics Letters, 94 (20). 202103pp. doi:10.1063/1.3130718
Plain TextLiu, Min-Ling, Huang, Fu-Qiang, Chen, Li-Dong, Chen, I-Wei (2009) A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se). Applied Physics Letters, 94 (20). 202103pp. doi:10.1063/1.3130718
In(2009, May) Applied Physics Letters Vol. 94 (20) AIP Publishing

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