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Banerjee, Koushik, Ghosh, Siddhartha, Mallick, Shubhrangshu, Plis, Elena, Krishna, Sanjay, Grein, Christoph (2009) Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode. Applied Physics Letters, 94 (20). 201107pp. doi:10.1063/1.3139012

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Reference TypeJournal (article/letter/editorial)
TitleMidwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
JournalApplied Physics Letters
AuthorsBanerjee, KoushikAuthor
Ghosh, SiddharthaAuthor
Mallick, ShubhrangshuAuthor
Plis, ElenaAuthor
Krishna, SanjayAuthor
Grein, ChristophAuthor
Year2009 (May 18)Volume94
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3139012Search in ResearchGate
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Mindat Ref. ID8574227Long-form Identifiermindat:1:5:8574227:7
GUID0
Full ReferenceBanerjee, Koushik, Ghosh, Siddhartha, Mallick, Shubhrangshu, Plis, Elena, Krishna, Sanjay, Grein, Christoph (2009) Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode. Applied Physics Letters, 94 (20). 201107pp. doi:10.1063/1.3139012
Plain TextBanerjee, Koushik, Ghosh, Siddhartha, Mallick, Shubhrangshu, Plis, Elena, Krishna, Sanjay, Grein, Christoph (2009) Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode. Applied Physics Letters, 94 (20). 201107pp. doi:10.1063/1.3139012
In(2009, May) Applied Physics Letters Vol. 94 (20) AIP Publishing

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Mallick, Shubhrangshu, Banerjee, Koushik, Ghosh, Siddhartha, Plis, Elena, Rodriguez, Jean Baptiste, Krishna, Sanjay, Grein, Christoph (2007) Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode. Applied Physics Letters, 91 (24). 241111pp. doi:10.1063/1.2817608
Myers, Stephen, Plis, Elena, Khoshakhlagh, Arezou, Kim, Ha Sul, Sharma, Yagya, Dawson, Ralph, Krishna, Sanjay, Gin, Aaron (2009) The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors. Applied Physics Letters, 95 (12). 121110pp. doi:10.1063/1.3230069
Plis, E., Kim, H. S., Bishop, G., Krishna, S., Banerjee, K., Ghosh, S. (2008) Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors. Applied Physics Letters, 93 (12). 123507pp. doi:10.1063/1.2990049
Plis, E., Annamalai, S., Posani, K. T., Krishna, S., Rupani, R. A., Ghosh, S. (2006) Midwave infrared type-II InAs∕GaSb superlattice detectors with mixed interfaces. Journal of Applied Physics, 100 (1). 14510pp. doi:10.1063/1.2214222
Ramirez, David A., Shao, Jiayi, Hayat, Majeed M., Krishna, Sanjay (2010) Midwave infrared quantum dot avalanche photodiode. Applied Physics Letters, 97 (22). 221106pp. doi:10.1063/1.3520519
Plis, Elena, Klein, Brianna, Myers, Stephen, Gautam, Nutan, Krishna, Sanjay (2013) (111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection. physica status solidi (c), 10 (5). 748-751 doi:10.1002/pssc.201200605
Cervera, C., Rodriguez, J. B., Chaghi, R., Aït-Kaci, H., Christol, P. (2009) Characterization of midwave infrared InAs/GaSb superlattice photodiode. Journal of Applied Physics, 106 (2). 24501pp. doi:10.1063/1.3174439
Gopal, V., Plis, E., Rodriguez, J.-B., Jones, C. E., Faraone, L., Krishna, S. (2008) Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes. Journal of Applied Physics, 104 (12). 124506pp. doi:10.1063/1.3042232
Gautam, Nutan, Myers, S., Barve, A. V., Klein, Brianna, Smith, E. P., Rhiger, D. R., Dawson, L. R., Krishna, S. (2012) High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice. Applied Physics Letters, 101 (2). 21106pp. doi:10.1063/1.4733660
Plis, E., Gautam, N., Myers, S., Sharma, Y., Dawson, L. R., Krishna, S. (2010) Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation. Applied Physics Letters, 97 (14). 143512pp. doi:10.1063/1.3499290
Klein, B, Plis, E, Kutty, M N, Gautam, N, Albrecht, A, Myers, S, Krishna, S (2011) Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors. Journal of Physics D: Applied Physics, 44. 75102pp. doi:10.1088/0022-3727/44/7/075102
 
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