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Salloch, D., Wieser, U., Kunze, U., Hackbarth, T. (2009) Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers. Applied Physics Letters, 94 (20). 203503pp. doi:10.1063/1.3140439

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Reference TypeJournal (article/letter/editorial)
TitleThermopower-enhanced efficiency of Si/SiGe ballistic rectifiers
JournalApplied Physics Letters
AuthorsSalloch, D.Author
Wieser, U.Author
Kunze, U.Author
Hackbarth, T.Author
Year2009 (May 18)Volume94
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3140439Search in ResearchGate
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Mindat Ref. ID8574273Long-form Identifiermindat:1:5:8574273:6
GUID0
Full ReferenceSalloch, D., Wieser, U., Kunze, U., Hackbarth, T. (2009) Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers. Applied Physics Letters, 94 (20). 203503pp. doi:10.1063/1.3140439
Plain TextSalloch, D., Wieser, U., Kunze, U., Hackbarth, T. (2009) Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers. Applied Physics Letters, 94 (20). 203503pp. doi:10.1063/1.3140439
In(2009, May) Applied Physics Letters Vol. 94 (20) AIP Publishing

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von Pock, J. F., Salloch, D., Wieser, U., Hackbarth, T., Kunze, U. (2017) Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions. Journal of Applied Physics, 121 (1). 14304pp. doi:10.1063/1.4973279
von Pock, J. F., Salloch, D., Qiao, G., Wieser, U., Hackbarth, T., Kunze, U. (2016) Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts. Journal of Applied Physics, 119 (13). 134306pp. doi:10.1063/1.4945116
Wieser, U., Poenariu, S. A., Kunze, U., Hackbarth, T. (2005) Phonon-induced breakdown of negative bend resistance in an asymmetric Si∕SiGe cross junction. Applied Physics Letters, 87 (25). 252114pp. doi:10.1063/1.2150268
Wieser, U., Kunze, U., Ismail, K., Chu, J. O. (2002) Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact. Applied Physics Letters, 81 (9). 1726-1728 doi:10.1063/1.1503157
Wiemann, M., Wieser, U., Kunze, U., Reuter, D., Wieck, A. D. (2010) Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters, 97 (6). 62112pp. doi:10.1063/1.3475922
Knop, M., Wieser, U., Kunze, U., Reuter, D., Wieck, A. D. (2006) Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters, 88 (8). 82110pp. doi:10.1063/1.2179618
von Pock, J., Wieser, U., Kunze, U. (2017) Input-Current Addition in Closely Positioned Dual-Stage Ballistic Rectifiers. Physical Review Applied, 7 (4). doi:10.1103/physrevapplied.7.044023
Hackbarth, T., Herzog, H.-J., Hieber, K.-H., König, U., Bollani, M., Chrastina, D., von Känel, H. (2003) Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition. Applied Physics Letters, 83 (26). 5464-5466 doi:10.1063/1.1636820
Weingart, S., Bock, C., Kunze, U., Speck, F., Seyller, Th., Ley, L. (2009) Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions. Applied Physics Letters, 95 (26). 262101pp. doi:10.1063/1.3276560
Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., Wieck, A. D. (2009) Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters, 94 (2). 22107pp. doi:10.1063/1.3069281
Dötsch, U., Gennser, U., David, C., Dehlinger, G., Grützmacher, D., Heinzel, T., Lüscher, S., Ensslin, K. (2001) Single-hole transistor in a p-Si/SiGe quantum well. Applied Physics Letters, 78 (3). 341-343 doi:10.1063/1.1342040
 
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