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Chang, L. W., McMillen, M., Gregg, J. M. (2009) The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics. Applied Physics Letters, 94 (21). 212905pp. doi:10.1063/1.3132583

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics
JournalApplied Physics Letters
AuthorsChang, L. W.Author
McMillen, M.Author
Gregg, J. M.Author
Year2009 (May 25)Volume94
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3132583Search in ResearchGate
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Mindat Ref. ID8574339Long-form Identifiermindat:1:5:8574339:1
GUID0
Full ReferenceChang, L. W., McMillen, M., Gregg, J. M. (2009) The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics. Applied Physics Letters, 94 (21). 212905pp. doi:10.1063/1.3132583
Plain TextChang, L. W., McMillen, M., Gregg, J. M. (2009) The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics. Applied Physics Letters, 94 (21). 212905pp. doi:10.1063/1.3132583
In(2009, May) Applied Physics Letters Vol. 94 (21) AIP Publishing

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Chang, L. W., McMillen, M., Morrison, F. D., Scott, J. F., Gregg, J. M. (2008) Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets. Applied Physics Letters, 93 (13). 132904pp. doi:10.1063/1.2990760
McMillen, M., McQuaid, R. G. P., Haire, S. C., McLaughlin, C. D., Chang, L. W., Schilling, A., Gregg, J. M. (2010) The influence of notches on domain dynamics in ferroelectric nanowires. Applied Physics Letters, 96 (4). 42904pp. doi:10.1063/1.3300638
Gregg, J. M. (2006) Comments on “Application of the interface capacitance model to thin film relaxors and ferroelectrics” [Appl. Phys. Lett. 88, 262904 (2006)]. Applied Physics Letters, 89 (19). 196101pp. doi:10.1063/1.2385627
de la Fuente, C., Arnaudas, J. I., Ciria, M., del Moral, A., Dufour, C., Dumesnil, K. (2009) Influence of epitaxial strain on the magnetic properties of (110) SmFe2 thin film. Applied Physics Letters, 94 (13). 132503pp. doi:10.1063/1.3110965
Gregg, J. M., Bowman, R. M. (1997) The effect of applied strain on the resistance of VO2 thin films. Applied Physics Letters, 71 (25). 3649-3651 doi:10.1063/1.120469
McQuaid, R G P, McMillen, M, Chang, L-W, Gruverman, A, Gregg, J M (2012) Domain wall propagation in meso- and nanoscale ferroelectrics. Journal of Physics: Condensed Matter, 24 (2). 24204pp. doi:10.1088/0953-8984/24/2/024204
McAneney, J., Sinnamon, L. J., Bowman, R. M., Gregg, J. M. (2003) Temperature and frequency characteristics of the interfacial capacitance in thin-film barium–strontium–titanate capacitors. Journal of Applied Physics, 94 (7). 4566-4570 doi:10.1063/1.1608472
Budnitzki, M., Pierron, O. (2009) The influence of nanoscale atomic-layer-deposited alumina coating on the fatigue behavior of polycrystalline silicon thin films. Applied Physics Letters, 94 (14). 141906pp. doi:10.1063/1.3112565
Tyunina, M., Levoska, J. (2006) Application of the interface capacitance model to thin-film relaxors and ferroelectrics. Applied Physics Letters, 88 (26). 262904pp. doi:10.1063/1.2218321
Lookman, A., McAneney, J., Bowman, R. M., Gregg, J. M., Kut, J., Rios, S., Ruediger, A., Dawber, M., Scott, J. F. (2004) Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitors. Applied Physics Letters, 85 (21). 5010-5012 doi:10.1063/1.1827934
Corbett, M. H., Bowman, R. M., Gregg, J. M., Foord, D. T. (2001) Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlattices. Applied Physics Letters, 79 (6). 815-817 doi:10.1063/1.1391233
 
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