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Myronov, M., Leadley, D. R., Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate. Applied Physics Letters, 94 (9). 92108pp. doi:10.1063/1.3090034

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Reference TypeJournal (article/letter/editorial)
TitleHigh mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate
JournalApplied Physics Letters
AuthorsMyronov, M.Author
Leadley, D. R.Author
Shiraki, Y.Author
Year2009 (March 2)Volume94
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3090034Search in ResearchGate
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Mindat Ref. ID8576721Long-form Identifiermindat:1:5:8576721:2
GUID0
Full ReferenceMyronov, M., Leadley, D. R., Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate. Applied Physics Letters, 94 (9). 92108pp. doi:10.1063/1.3090034
Plain TextMyronov, M., Leadley, D. R., Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate. Applied Physics Letters, 94 (9). 92108pp. doi:10.1063/1.3090034
In(2009, March) Applied Physics Letters Vol. 94 (9) AIP Publishing

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Morrison, C., Casteleiro, C., Leadley, D. R., Myronov, M. (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103pp. doi:10.1063/1.4962432
Myronov, M., Shiraki, Y. (2007) Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrate. Journal of Crystal Growth, 301. 315-318 doi:10.1016/j.jcrysgro.2006.11.195
Shah, V. A., Dobbie, A., Myronov, M., Fulgoni, D. J. F., Nash, L. J., Leadley, D. R. (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, 93 (19). 192103pp. doi:10.1063/1.3023068
Hassan, A. H. A., Morris, R. J. H., Mironov, O. A., Beanland, R., Walker, D., Huband, S., Dobbie, A., Myronov, M., Leadley, D. R. (2014) Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well. Applied Physics Letters, 104 (13). 132108pp. doi:10.1063/1.4870392
Dobbie, A., Myronov, M., Morris, R. J. H., Hassan, A. H. A., Prest, M. J., Shah, V. A., Parker, E. H. C., Whall, T. E., Leadley, D. R. (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, 101 (17). 172108pp. doi:10.1063/1.4763476
Shah, V. A., Dobbie, A., Myronov, M., Leadley, D. R. (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, 107 (6). 64304pp. doi:10.1063/1.3311556
Morris, R. J. H., Dowsett, M. G., Beanland, R., Dobbie, A., Myronov, M., Leadley, D. R. (2013) O2+probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, 45 (1). 348-351 doi:10.1002/sia.4963
Myronov, M., Shiraki, Y., Mouri, T., Itoh, K. M. (2007) Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping. Applied Physics Letters, 90 (19). 192108pp. doi:10.1063/1.2737396
Song, S.-H., Pan, Wei, Tsui, D. C., Xie, Y. H., Monroe, Don (1997) Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons. Applied Physics Letters, 70 (25). 3422-3424 doi:10.1063/1.119190
Dobbie, A., Nguyen, Van Huy, Morris, R. J. H., Liu, Xue-Chao, Myronov, M., Leadley, D. R. (2012) Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8Reverse-Graded Buffers. Journal of the Electrochemical Society, 159. doi:10.1149/2.063205jes
Myronov, Maksym, Shiraki, Yasuhiro (2007) Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate. Japanese Journal of Applied Physics, 46 (2) 721-725 doi:10.1143/jjap.46.721
 
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