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Akhmetov, V., Kissinger, G., von Ammon, W. (2009) Interaction of oxygen with thermally induced vacancies in Czochralski silicon. Applied Physics Letters, 94 (9). 92105pp. doi:10.1063/1.3090486

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Reference TypeJournal (article/letter/editorial)
TitleInteraction of oxygen with thermally induced vacancies in Czochralski silicon
JournalApplied Physics Letters
AuthorsAkhmetov, V.Author
Kissinger, G.Author
von Ammon, W.Author
Year2009 (March 2)Volume94
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3090486Search in ResearchGate
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Mindat Ref. ID8576723Long-form Identifiermindat:1:5:8576723:0
GUID0
Full ReferenceAkhmetov, V., Kissinger, G., von Ammon, W. (2009) Interaction of oxygen with thermally induced vacancies in Czochralski silicon. Applied Physics Letters, 94 (9). 92105pp. doi:10.1063/1.3090486
Plain TextAkhmetov, V., Kissinger, G., von Ammon, W. (2009) Interaction of oxygen with thermally induced vacancies in Czochralski silicon. Applied Physics Letters, 94 (9). 92105pp. doi:10.1063/1.3090486
In(2009, March) Applied Physics Letters Vol. 94 (9) AIP Publishing

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Kissinger, G., Huber, A., Nakai, K., Lysytskij, O., Müller, T., Richter, H., von Ammon, W. (2005) Investigation of Ostwald ripening in nitrogen doped Czochralski silicon. Applied Physics Letters, 87 (10). 101904pp. doi:10.1063/1.2041835
Akhmetov, V., Kissinger, G., von Ammon, W. (2009) Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing. Physica B: Condensed Matter, 404 (23). 4572-4575 doi:10.1016/j.physb.2009.08.120
Kissinger, G., Dabrowski, J., Kot, D., Akhmetov, V., Sattler, A., von Ammon, W. (2011) Modeling the Early Stages of Oxygen Agglomeration. Journal of the Electrochemical Society, 158. doi:10.1149/1.3543935
Lim, S. Y., Rougieux, F. E., Macdonald, D. (2013) Boron-oxygen defect imaging in p-type Czochralski silicon. Applied Physics Letters, 103 (9). 92105pp. doi:10.1063/1.4819096
Kissinger, G., Dabrowski, J., Sattler, A., Seuring, C., Müller, T., Richter, H., von Ammon, W. (2007) Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers. Journal of the Electrochemical Society, 154. doi:10.1149/1.2717492
Ohsawa, A., Honda, K., Ohkawa, S., Shinohara, K. (1980) Oxygen striation and thermally induced microdefects in Czochralski‐grown silicon crystals. Applied Physics Letters, 37 (2). 157-159 doi:10.1063/1.91806
Sinno, Talid, Brown, Robert A., von Ammon, Wilfried, Dornberger, Erich (1997) On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals. Applied Physics Letters, 70 (17). 2250-2252 doi:10.1063/1.118829
Casali, R. A., Rücker, H., Methfessel, M. (2001) Interaction of vacancies with interstitial oxygen in silicon. Applied Physics Letters, 78 (7). 913-915 doi:10.1063/1.1347014
Rozgonyi, G. A., Pearce, C. W. (1977) Interstitial oxygen gettering in Czochralski silicon wafers. Applied Physics Letters, 31 (5). 343-345 doi:10.1063/1.89693
Tajima, Michio, Gösele, U., Weber, J., Sauer, R. (1983) Photoluminescence associated with thermally induced microdefects in Czochralski‐grown silicon crystals. Applied Physics Letters, 43 (3). 270-272 doi:10.1063/1.94323
McKenna, Keith, Shluger, Alexander (2009) The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2. Applied Physics Letters, 95 (22). 222111pp. doi:10.1063/1.3271184
 
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