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Zhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2009) Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides. Applied Physics Letters, 95 (25). 253501pp. doi:10.1063/1.3275001

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Reference TypeJournal (article/letter/editorial)
TitleEffects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides
JournalApplied Physics Letters
AuthorsZhao, HanAuthor
Huang, JeffAuthor
Chen, Yen-TingAuthor
Yum, Jung HwanAuthor
Wang, YanzhenAuthor
Zhou, FeiAuthor
Xue, FeiAuthor
Lee, Jack C.Author
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3275001Search in ResearchGate
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Mindat Ref. ID8580101Long-form Identifiermindat:1:5:8580101:1
GUID0
Full ReferenceZhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2009) Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides. Applied Physics Letters, 95 (25). 253501pp. doi:10.1063/1.3275001
Plain TextZhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2009) Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides. Applied Physics Letters, 95 (25). 253501pp. doi:10.1063/1.3275001
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2009) Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation. Applied Physics Letters, 95 (1). 13501pp. doi:10.1063/1.3173820
Chen, Yen-Ting, Zhao, Han, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2010) Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (25). 253502pp. doi:10.1063/1.3457388
Chen, Yen-Ting, Zhao, Han, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2010) Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (10). 103506pp. doi:10.1063/1.3357434
Xue, Fei, Zhao, Han, Chen, Yen-Ting, Wang, Yanzhen, Zhou, Fei, Lee, Jack C. (2011) InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric. Applied Physics Letters, 98 (8). 82106pp. doi:10.1063/1.3559609
Zhao, Han, Zhu, Feng, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C. (2009) Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 94 (9). 93505pp. doi:10.1063/1.3093442
Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2010) Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (10). 102101pp. doi:10.1063/1.3350893
Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2010) Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate. Journal of the Electrochemical Society, 157. doi:10.1149/1.3273197
Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C. (2009) Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Ã…. Applied Physics Letters, 94 (21). 213505pp. doi:10.1063/1.3143629
Wang, Yanzhen, Chen, Yen-Ting, Xue, Fei, Zhou, Fei, Lee, Jack C. (2012) HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 100 (24). 243508pp. doi:10.1063/1.4729606
Wang, Yanzhen, Chen, Yen-Ting, Zhao, Han, Xue, Fei, Zhou, Fei, Lee, Jack C. (2011) Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor. Applied Physics Letters, 98 (4). 43506pp. doi:10.1063/1.3549197
Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C. (2009) High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer. Applied Physics Letters, 94 (19). 193502pp. doi:10.1063/1.3133360
 
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