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Sharma, A., Mathijssen, S. G. J., Kemerink, M., de Leeuw, D. M., Bobbert, P. A. (2009) Proton migration mechanism for the instability of organic field-effect transistors. Applied Physics Letters, 95 (25). 253305pp. doi:10.1063/1.3275807

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Reference TypeJournal (article/letter/editorial)
TitleProton migration mechanism for the instability of organic field-effect transistors
JournalApplied Physics Letters
AuthorsSharma, A.Author
Mathijssen, S. G. J.Author
Kemerink, M.Author
de Leeuw, D. M.Author
Bobbert, P. A.Author
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3275807Search in ResearchGate
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Mindat Ref. ID8580139Long-form Identifiermindat:1:5:8580139:4
GUID0
Full ReferenceSharma, A., Mathijssen, S. G. J., Kemerink, M., de Leeuw, D. M., Bobbert, P. A. (2009) Proton migration mechanism for the instability of organic field-effect transistors. Applied Physics Letters, 95 (25). 253305pp. doi:10.1063/1.3275807
Plain TextSharma, A., Mathijssen, S. G. J., Kemerink, M., de Leeuw, D. M., Bobbert, P. A. (2009) Proton migration mechanism for the instability of organic field-effect transistors. Applied Physics Letters, 95 (25). 253305pp. doi:10.1063/1.3275807
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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Sharma, A., Mathijssen, S. G. J., Smits, E. C. P., Kemerink, M., de Leeuw, D. M., Bobbert, P. A. (2010) Proton migration mechanism for operational instabilities in organic field-effect transistors. Physical Review B, 82 (7) doi:10.1103/physrevb.82.075322
Sharma, A., Mathijssen, S. G. J., Cramer, T., Kemerink, M., de Leeuw, D. M., Bobbert, P. A. (2010) Anomalous current transients in organic field-effect transistors. Applied Physics Letters, 96 (10). 103306pp. doi:10.1063/1.3339879
Mathijssen, S. G. J., Cölle, M., Mank, A. J. G., Kemerink, M., Bobbert, P. A., de Leeuw, D. M. (2007) Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress. Applied Physics Letters, 90 (19). 192104pp. doi:10.1063/1.2737419
Sharma, A., Mathijssen, S. G. J., Bobbert, P. A., de Leeuw, D. M. (2011) Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors. Applied Physics Letters, 99 (10). 103302pp. doi:10.1063/1.3634066
Bobbert, Peter A., Sharma, Abhinav, Mathijssen, Simon G. J., Kemerink, Martijn, de Leeuw, Dago M. (2012) Operational Stability of Organic Field-Effect Transistors. Advanced Materials, 24. 1146-1158 doi:10.1002/adma.201104580
Kemerink, M., Charrier, D. S. H., Smits, E. C. P., Mathijssen, S. G. J., de Leeuw, D. M., Janssen, R. A. J. (2008) On the width of the recombination zone in ambipolar organic field effect transistors. Applied Physics Letters, 93 (3). 33312pp. doi:10.1063/1.2963488
Sharma, A., Janssen, N. M. A., Mathijssen, S. G. J., de Leeuw, D. M., Kemerink, M., Bobbert, P. A. (2011) Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor. Physical Review B, 83 (12) doi:10.1103/physrevb.83.125310
Mathijssen, S. G. J., Kemerink, M., Sharma, A., Cölle, M., Bobbert, P. A., Janssen, R. A. J., de Leeuw, D. M. (2008) Charge Trapping at the Dielectric of Organic Transistors Visualized in Real Time and Space. Advanced Materials, 20. 975-979 doi:10.1002/adma.200702688
Spijkman, M., Mathijssen, S. G. J., Smits, E. C. P., Kemerink, M., Blom, P. W. M., de Leeuw, D. M. (2010) Monolayer dual gate transistors with a single charge transport layer. Applied Physics Letters, 96 (14). 143304pp. doi:10.1063/1.3379026
Mathijssen, S. G. J., Cölle, M., Gomes, H., Smits, E. C. P., de Boer, B., McCulloch, I., Bobbert, P. A., de Leeuw, D. M. (2007) Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors. Advanced Materials, 19. 2785-2789 doi:10.1002/adma.200602798
Roelofs, W. S. C., Mathijssen, S. G. J., Janssen, R. A. J., de Leeuw, D. M., Kemerink, M. (2012) Accurate description of charge transport in organic field effect transistors using an experimentally extracted density of states. Physical Review B, 85 (8) doi:10.1103/physrevb.85.085202
 
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