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Yi, H. T., Choi, T., Cheong, S.-W. (2009) Reversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories. Applied Physics Letters, 95 (6). 63509pp. doi:10.1063/1.3204690

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Reference TypeJournal (article/letter/editorial)
TitleReversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories
JournalApplied Physics Letters
AuthorsYi, H. T.Author
Choi, T.Author
Cheong, S.-W.Author
Year2009 (August 10)Volume95
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3204690Search in ResearchGate
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Mindat Ref. ID8581029Long-form Identifiermindat:1:5:8581029:5
GUID0
Full ReferenceYi, H. T., Choi, T., Cheong, S.-W. (2009) Reversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories. Applied Physics Letters, 95 (6). 63509pp. doi:10.1063/1.3204690
Plain TextYi, H. T., Choi, T., Cheong, S.-W. (2009) Reversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories. Applied Physics Letters, 95 (6). 63509pp. doi:10.1063/1.3204690
In(2009, August) Applied Physics Letters Vol. 95 (6) AIP Publishing

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Lee, J. S., Choi, W. S., Lee, S. B., Chang, S. H., Shin, H., Kahng, B., Noh, T. W. (2009) Multilevel unipolar resistance switching in TiO2 thin films. Applied Physics Letters, 95 (9). 93508pp. doi:10.1063/1.3224185
Choi, Ji-Hyuk, Das, Sachindra Nath, Myoung, Jae-Min (2009) Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications. Applied Physics Letters, 95 (6). 62105pp. doi:10.1063/1.3204450
Wu, S. X., Peng, H. Y., Wu, T. (2011) Concurrent nonvolatile resistance and capacitance switching in LaAlO3. Applied Physics Letters, 98 (9). 93503pp. doi:10.1063/1.3560257
Lee, H. J., Kim, K. H., Kim, M. W., Noh, T. W., Kim, B. G., Koo, T. Y., Cheong, S.-W., Wang, Y. J., Wei, X. (2002) Optical evidence of multiphase coexistence in single crystalline(La,Pr,Ca)MnO3. Physical Review B, 65 (11) doi:10.1103/physrevb.65.115118
Yi, H. T., Choi, Y. J., Lee, S., Cheong, S.-W. (2008) Multiferroicity in the square-lattice antiferromagnet of Ba2CoGe2O7. Applied Physics Letters, 92 (21). 212904pp. doi:10.1063/1.2937110
Lee, S. B., Chae, S. C., Chang, S. H., Noh, T. W. (2009) Predictability of reset switching voltages in unipolar resistance switching. Applied Physics Letters, 94 (17). 173504pp. doi:10.1063/1.3126019
Chen, Xinman, Wu, Guangheng, Jiang, Peng, Liu, Weifang, Bao, Dinghua (2009) Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications. Applied Physics Letters, 94 (3). 33501pp. doi:10.1063/1.3073858
Zeng, X. T., Wong, H. K. (1995) Epitaxial growth of single‐crystal (La,Ca)MnO3 thin films. Applied Physics Letters, 66 (24). 3371-3373 doi:10.1063/1.113761
Yanagisawa, Yoshihiko, Tanaka, Hidekazu, Kawai, Tomoji, Pellegrino, Luca (2006) Digitalized magnetoresistance observed in (La,Pr,Ca)MnO3 nanochannel structures. Applied Physics Letters, 89 (25). 253121pp. doi:10.1063/1.2423235
Nguyen, T. V. A., Hattori, A. N., Nagai, M., Nakamura, T., Ashida, M., Tanaka, H. (2016) Electrical transport properties of (La,Pr,Ca)MnO3 nanowires investigated using terahertz time domain spectroscopy. Journal of Applied Physics, 119 (12). 125102pp. doi:10.1063/1.4944601
 
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