Vote for your favorite mineral in #MinCup25! - Stibnite vs. Okenite
It's a battle of dark and light as soft, dramatic stibnite goes up against adorable cottonballs of Okenite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Haimoto, T., Hoshii, T., Nakagawa, S., Takenaka, M., Takagi, S. (2010) Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces. Applied Physics Letters, 96 (1). 12107pp. doi:10.1063/1.3269906

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces
JournalApplied Physics Letters
AuthorsHaimoto, T.Author
Hoshii, T.Author
Nakagawa, S.Author
Takenaka, M.Author
Takagi, S.Author
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3269906Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8581622Long-form Identifiermindat:1:5:8581622:6
GUID0
Full ReferenceHaimoto, T., Hoshii, T., Nakagawa, S., Takenaka, M., Takagi, S. (2010) Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces. Applied Physics Letters, 96 (1). 12107pp. doi:10.1063/1.3269906
Plain TextHaimoto, T., Hoshii, T., Nakagawa, S., Takenaka, M., Takagi, S. (2010) Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces. Applied Physics Letters, 96 (1). 12107pp. doi:10.1063/1.3269906
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Hoshii, T., Yokoyama, M., Yamada, H., Hata, M., Yasuda, T., Takenaka, M., Takagi, S. (2010) Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2. Applied Physics Letters, 97 (13). 132102pp. doi:10.1063/1.3464170
Suzuki, R., Taoka, N., Yokoyama, M., Lee, S., Kim, S. H., Hoshii, T., Yasuda, T., Jevasuwan, W., Maeda, T., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S. (2012) 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density. Applied Physics Letters, 100 (13). 132906pp. doi:10.1063/1.3698095
Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2004) Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates. Applied Physics Letters, 85 (15). 3181-3183 doi:10.1063/1.1805194
Otani, Yohei, Itayama, Yasuhiro, Tanaka, Takuo, Fukuda, Yukio, Toyota, Hiroshi, Ono, Toshiro, Mitsui, Minoru, Nakagawa, Kiyokazu (2007) Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques. Applied Physics Letters, 90 (14). 142114pp. doi:10.1063/1.2720345
Nishi, K., Yokoyama, M., Yokoyama, H., Hoshi, T., Sugiyama, H., Takenaka, M., Takagi, S. (2014) Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces. Applied Physics Letters, 105 (23). 233503pp. doi:10.1063/1.4903837
Hoshii, Takuya, Lee, Sunghoon, Suzuki, Rena, Taoka, Noriyuki, Yokoyama, Masafumi, Yamada, Hishashi, Hata, Masahiko, Yasuda, Tetsuji, Takenaka, Mitsuru, Takagi, Shinichi (2012) Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation. Journal of Applied Physics, 112 (7). 73702pp. doi:10.1063/1.4755804
Urabe, Yuji, Yokoyama, Masafumi, Takagi, Hideki, Yasuda, Tetsuji, Miyata, Noriyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi (2010) Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors. Applied Physics Letters, 97 (25). 253502pp. doi:10.1063/1.3528334
Nakagawa, Shota, Yokoyama, Masafumi, Ichikawa, Osamu, Hata, Masahiko, Tanaka, Masaaki, Takenaka, Mituru, Takagi, Shinichi (2009) Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c093
Yokoyama, Masafumi, Yokoyama, Haruki, Takenaka, Mitsuru, Takagi, Shinichi (2015) Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding. Applied Physics Letters, 106 (7). 73503pp. doi:10.1063/1.4906922
Goodnick, S. M., Hwang, T., Wilmsen, C. W. (1984) New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 44 (4). 453-455 doi:10.1063/1.94764
Yun, M., Ravindran, R., Hossain, M., Gangopadhyay, S., Scherf, U., BĂźnnagel, T., Galbrecht, F., Arif, M., Guha, S. (2006) Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes. Applied Physics Letters, 89 (1). 13506pp. doi:10.1063/1.2219147
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 2, 2025 07:22:56
Go to top of page