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Kim, Eun Ji, Wang, Lingquan, Asbeck, Peter M., Saraswat, Krishna C., McIntyre, Paul C. (2010) Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals. Applied Physics Letters, 96 (1). 12906pp. doi:10.1063/1.3281027

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Reference TypeJournal (article/letter/editorial)
TitleBorder traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
JournalApplied Physics Letters
AuthorsKim, Eun JiAuthor
Wang, LingquanAuthor
Asbeck, Peter M.Author
Saraswat, Krishna C.Author
McIntyre, Paul C.Author
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3281027Search in ResearchGate
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Mindat Ref. ID8581697Long-form Identifiermindat:1:5:8581697:0
GUID0
Full ReferenceKim, Eun Ji, Wang, Lingquan, Asbeck, Peter M., Saraswat, Krishna C., McIntyre, Paul C. (2010) Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals. Applied Physics Letters, 96 (1). 12906pp. doi:10.1063/1.3281027
Plain TextKim, Eun Ji, Wang, Lingquan, Asbeck, Peter M., Saraswat, Krishna C., McIntyre, Paul C. (2010) Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals. Applied Physics Letters, 96 (1). 12906pp. doi:10.1063/1.3281027
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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