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Leach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Paskova, T., Preble, E., Evans, K. R., Lu, Chang-Zhi (2010) Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96 (10). 102109pp. doi:10.1063/1.3358192

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Reference TypeJournal (article/letter/editorial)
TitleCarrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
JournalApplied Physics Letters
AuthorsLeach, J. H.Author
Wu, M.Author
Ni, X.Author
Li, X.Author
Xie, J.Author
Özgür, Ü.Author
Morkoç, H.Author
Paskova, T.Author
Preble, E.Author
Evans, K. R.Author
Lu, Chang-ZhiAuthor
Year2010 (March 8)Volume96
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.3358192Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8581939Long-form Identifiermindat:1:5:8581939:3
GUID0
Full ReferenceLeach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Paskova, T., Preble, E., Evans, K. R., Lu, Chang-Zhi (2010) Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96 (10). 102109pp. doi:10.1063/1.3358192
Plain TextLeach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Paskova, T., Preble, E., Evans, K. R., Lu, Chang-Zhi (2010) Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96 (10). 102109pp. doi:10.1063/1.3358192
In(2010, March) Applied Physics Letters Vol. 96 (10) AIP Publishing

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Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Paskova, T., Preble, E., Evans, K. R. (2010) Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates. Applied Physics Letters, 96 (13). 133505pp. doi:10.1063/1.3358392
Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Cheng, H., Kurdak, Ç. (2009) Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons. Applied Physics Letters, 95 (22). 223504pp. doi:10.1063/1.3271183
Kayis, C., Ferreyra, R. A., Wu, M., Li, X., Özgür, Ü., Matulionis, A., Morkoç, H. (2011) Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects. Applied Physics Letters, 99 (6). 63505pp. doi:10.1063/1.3624702
Leach, J. H., Ni, X., Li, X., Wu, M., Özgür, Ü., Morkoç, H., Zhou, L., Cullen, D. A., Smith, D. J., Cheng, H., Kurdak, Ç., Meyer, J. R., Vurgaftman, I. (2010) Bias dependent two-channel conduction in InAlN/AlN/GaN structures. Journal of Applied Physics, 107 (8). 83706pp. doi:10.1063/1.3330627
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Ščajev, P., Jarašiūnas, K., Özgür, Ü., Morkoç, H., Leach, J., Paskova, T. (2012) Anisotropy of free-carrier absorption and diffusivity in m-plane GaN. Applied Physics Letters, 100 (2). 22112pp. doi:10.1063/1.3674306
Xie, J., Leach, J. H., Ni, X., Wu, M., Shimada, R., Özgür, Ü., Morkoç, H. (2007) Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers. Applied Physics Letters, 91 (26). 262102pp. doi:10.1063/1.2824461
Lee, J., Li, X., Ni, X., Özgür, Ü., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) On carrier spillover in c- and m-plane InGaN light emitting diodes. Applied Physics Letters, 95 (20). 201113pp. doi:10.1063/1.3266833
Xie, Jinqiao, Ni, Xianfeng, Wu, Mo, Leach, Jacob H., Özgür, Ümit, Morkoç, Hadis (2007) High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors. Applied Physics Letters, 91 (13). 132116pp. doi:10.1063/1.2794419
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