Dasgupta, Sansaptak, Nidhi, , Brown, David F., Wu, Feng, Keller, Stacia, Speck, James S., Mishra, Umesh K. (2010) Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth. Applied Physics Letters, 96 (14). 143504pp. doi:10.1063/1.3374331
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth | ||
Journal | Applied Physics Letters | ||
Authors | Dasgupta, Sansaptak | Author | |
Nidhi, | Author | ||
Brown, David F. | Author | ||
Wu, Feng | Author | ||
Keller, Stacia | Author | ||
Speck, James S. | Author | ||
Mishra, Umesh K. | Author | ||
Year | 2010 (April 5) | Volume | 96 |
Issue | 14 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3374331Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8582542 | Long-form Identifier | mindat:1:5:8582542:8 |
GUID | 0 | ||
Full Reference | Dasgupta, Sansaptak, Nidhi, , Brown, David F., Wu, Feng, Keller, Stacia, Speck, James S., Mishra, Umesh K. (2010) Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth. Applied Physics Letters, 96 (14). 143504pp. doi:10.1063/1.3374331 | ||
Plain Text | Dasgupta, Sansaptak, Nidhi, , Brown, David F., Wu, Feng, Keller, Stacia, Speck, James S., Mishra, Umesh K. (2010) Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth. Applied Physics Letters, 96 (14). 143504pp. doi:10.1063/1.3374331 | ||
In | (2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing |
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