Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Miyata, Noriyuki, Urabe, Yuji, Ishii, Hiroyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi (2010) III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface. Applied Physics Letters, 96 (14). 142106pp. doi:10.1063/1.3374447
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface | ||
| Journal | Applied Physics Letters | ||
| Authors | Yokoyama, Masafumi | Author | |
| Yasuda, Tetsuji | Author | ||
| Takagi, Hideki | Author | ||
| Miyata, Noriyuki | Author | ||
| Urabe, Yuji | Author | ||
| Ishii, Hiroyuki | Author | ||
| Yamada, Hisashi | Author | ||
| Fukuhara, Noboru | Author | ||
| Hata, Masahiko | Author | ||
| Sugiyama, Masakazu | Author | ||
| Nakano, Yoshiaki | Author | ||
| Takenaka, Mitsuru | Author | ||
| Takagi, Shinichi | Author | ||
| Year | 2010 (April 5) | Volume | 96 |
| Issue | 14 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3374447Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8582556 | Long-form Identifier | mindat:1:5:8582556:1 |
| GUID | 0 | ||
| Full Reference | Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Miyata, Noriyuki, Urabe, Yuji, Ishii, Hiroyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi (2010) III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface. Applied Physics Letters, 96 (14). 142106pp. doi:10.1063/1.3374447 | ||
| Plain Text | Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Miyata, Noriyuki, Urabe, Yuji, Ishii, Hiroyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi (2010) III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface. Applied Physics Letters, 96 (14). 142106pp. doi:10.1063/1.3374447 | ||
| In | (2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing | ||
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