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Guo, Yue, An, Xia, Huang, Ru, Fan, Chunhui, Zhang, Xing (2010) Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique. Applied Physics Letters, 96 (14). 143502pp. doi:10.1063/1.3378878

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Reference TypeJournal (article/letter/editorial)
TitleTuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique
JournalApplied Physics Letters
AuthorsGuo, YueAuthor
An, XiaAuthor
Huang, RuAuthor
Fan, ChunhuiAuthor
Zhang, XingAuthor
Year2010 (April 5)Volume96
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3378878Search in ResearchGate
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Mindat Ref. ID8582604Long-form Identifiermindat:1:5:8582604:7
GUID0
Full ReferenceGuo, Yue, An, Xia, Huang, Ru, Fan, Chunhui, Zhang, Xing (2010) Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique. Applied Physics Letters, 96 (14). 143502pp. doi:10.1063/1.3378878
Plain TextGuo, Yue, An, Xia, Huang, Ru, Fan, Chunhui, Zhang, Xing (2010) Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique. Applied Physics Letters, 96 (14). 143502pp. doi:10.1063/1.3378878
In(2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing

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Xia, An, Chun-Hui, Fan, Ru, Huang, Yue, Guo, Cong, Xu, Xing, Zhang, Yang-Yuan, Wang (2009) The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique. Chinese Physics B, 18. 4465-4469 doi:10.1088/1674-1056/18/10/060
Ikeda, Keiji, Yamashita, Yoshimi, Sugiyama, Naoharu, Taoka, Noriyuki, Takagi, Shin-ichi (2006) Modulation of NiGeāˆ•Ge Schottky barrier height by sulfur segregation during Ni germanidation. Applied Physics Letters, 88 (15). 152115pp. doi:10.1063/1.2191829
Tang, Mengrao, Cai, Honghao (2020) The influence of ion-implantation on the effective Schottky barrier height of NiGe/n-Ge contacts. Chemical Physics, 530. 110626pp. doi:10.1016/j.chemphys.2019.110626
Oka, Hiroshi, Minoura, Yuya, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2014) Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation. Applied Physics Letters, 105 (6). 62107pp. doi:10.1063/1.4893152
(2013) Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction. Applied Physics Letters, 102 (3). 32108pp. doi:10.1063/1.4789437
Shannon, J. M. (1974) Reducing the effective height of a Schottky barrier using lowā€energy ion implantation. Applied Physics Letters, 24 (8). 369-371 doi:10.1063/1.1655220
Shannon, J. M. (1974) Increasing the effective height of a Schottky barrier using lowā€energy ion implantation. Applied Physics Letters, 25 (1). 75-77 doi:10.1063/1.1655287
Wu, Chingā€Yuan (1983) An analytic model for barrier height enhancement of the Schottky barrier diode using lowā€energy ion implantation. Journal of Applied Physics, 54 (2). 971-976 doi:10.1063/1.332022
Deng, Yunsheng, He, Dongsheng, Qiu, Yang, Gu, Rui, He, Jiaqing, Nakatsuka, Osamu (2018) Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact. Applied Physics Letters, 113 (25). 253503pp. doi:10.1063/1.5078558
Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu, Yamabe, Kikuo (2016) Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping. Applied Physics Letters, 109 (10). 102104pp. doi:10.1063/1.4962436
Ishiwara, Hiroshi, Furukawa, Seijiro (1977) Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation. Japanese Journal of Applied Physics, 16. 53 doi:10.7567/jjaps.16s1.53
 
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