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Kobayashi, Masaharu, Thareja, Gaurav, Sun, Yun, Goel, Niti, Garner, Mike, Tsai, Wilman, Pianetta, Piero, Nishi, Yoshio (2010) The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics. Applied Physics Letters, 96 (14). 142906pp. doi:10.1063/1.3379024

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Reference TypeJournal (article/letter/editorial)
TitleThe effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics
JournalApplied Physics Letters
AuthorsKobayashi, MasaharuAuthor
Thareja, GauravAuthor
Sun, YunAuthor
Goel, NitiAuthor
Garner, MikeAuthor
Tsai, WilmanAuthor
Pianetta, PieroAuthor
Nishi, YoshioAuthor
Year2010 (April 5)Volume96
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3379024Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8582613Long-form Identifiermindat:1:5:8582613:5
GUID0
Full ReferenceKobayashi, Masaharu, Thareja, Gaurav, Sun, Yun, Goel, Niti, Garner, Mike, Tsai, Wilman, Pianetta, Piero, Nishi, Yoshio (2010) The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics. Applied Physics Letters, 96 (14). 142906pp. doi:10.1063/1.3379024
Plain TextKobayashi, Masaharu, Thareja, Gaurav, Sun, Yun, Goel, Niti, Garner, Mike, Tsai, Wilman, Pianetta, Piero, Nishi, Yoshio (2010) The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics. Applied Physics Letters, 96 (14). 142906pp. doi:10.1063/1.3379024
In(2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing

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