Reference Type | Journal (article/letter/editorial) |
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Title | Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films |
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Journal | Applied Physics Letters |
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Authors | Devasia, Archana | Author |
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Kurinec, Santosh | Author |
Campbell, Kristy A. | Author |
Raoux, Simone | Author |
Year | 2010 (April 5) | Volume | 96 |
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Issue | 14 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3385781Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8582695 | Long-form Identifier | mindat:1:5:8582695:9 |
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GUID | 0 |
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Full Reference | Devasia, Archana, Kurinec, Santosh, Campbell, Kristy A., Raoux, Simone (2010) Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films. Applied Physics Letters, 96 (14). 141908pp. doi:10.1063/1.3385781 |
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Plain Text | Devasia, Archana, Kurinec, Santosh, Campbell, Kristy A., Raoux, Simone (2010) Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films. Applied Physics Letters, 96 (14). 141908pp. doi:10.1063/1.3385781 |
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In | (2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing |
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