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Nilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik (2010) Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 96 (15). 153505pp. doi:10.1063/1.3402760

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependent properties of InSb and InAs nanowire field-effect transistors
JournalApplied Physics Letters
AuthorsNilsson, Henrik A.Author
Caroff, PhilippeAuthor
Thelander, ClaesAuthor
Lind, ErikAuthor
Karlström, OlovAuthor
Wernersson, Lars-ErikAuthor
Year2010 (April 12)Volume96
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.3402760Search in ResearchGate
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Mindat Ref. ID8582886Long-form Identifiermindat:1:5:8582886:9
GUID0
Full ReferenceNilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik (2010) Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 96 (15). 153505pp. doi:10.1063/1.3402760
Plain TextNilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik (2010) Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 96 (15). 153505pp. doi:10.1063/1.3402760
In(2010, April) Applied Physics Letters Vol. 96 (15) AIP Publishing

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Nilsson, Henrik A., Caroff, Philippe, Lind, Erik, Pistol, Mats-Erik, Thelander, Claes, Wernersson, Lars-Erik (2011) Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors. Journal of Applied Physics, 110 (6). 64510pp. doi:10.1063/1.3633742
Roddaro, Stefano, Nilsson, Kristian, Astromskas, Gvidas, Samuelson, Lars, Wernersson, Lars-Erik, Karlström, Olov, Wacker, Andreas (2008) InAs nanowire metal-oxide-semiconductor capacitors. Applied Physics Letters, 92 (25). 253509pp. doi:10.1063/1.2949080
Astromskas, Gvidas, Storm, Kristian, Karlström, Olov, Caroff, Philippe, Borgström, Magnus, Wernersson, Lars-Erik (2010) Doping Incorporation in InAs nanowires characterized by capacitance measurements. Journal of Applied Physics, 108 (5). 54306pp. doi:10.1063/1.3475356
Ganjipour, Bahram, Nilsson, Henrik A., Mattias Borg, B., Wernersson, Lars-Erik, Samuelson, Lars, Xu, H. Q., Thelander, Claes (2011) GaSb nanowire single-hole transistor. Applied Physics Letters, 99 (26). 262104pp. doi:10.1063/1.3673328
Wernersson, Lars-Erik, Thelander, Claes, Lind, Erik, Samuelson, Lars (2010) III-V Nanowires—Extending a Narrowing Road. Proceedings of the IEEE, 98. 2047-2060 doi:10.1109/jproc.2010.2065211
Borg, B. Mattias, Ek, Martin, Ganjipour, Bahram, Dey, Anil W., Dick, Kimberly A., Wernersson, Lars-Erik, Thelander, Claes (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices. Applied Physics Letters, 101 (4). 43508pp. doi:10.1063/1.4739082
Wernersson, Lars-Erik, Lind, Erik, Samuelson, Lars, Löwgren, Truls, Ohlsson, Jonas (2007) Nanowire Field-Effect Transistor. Japanese Journal of Applied Physics, 46 (4) 2629-2631 doi:10.1143/jjap.46.2629
Mo, Jiongjiong, Lind, Erik, Roll, Guntrade, Wernersson, Lars-Erik (2014) Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 105 (3). 33516pp. doi:10.1063/1.4891569
Mattias Borg, B., Ek, Martin, Dick, Kimberly A., Ganjipour, Bahram, Dey, Anil W., Thelander, Claes, Wernersson, Lars-Erik (2011) Diameter reduction of nanowire tunnel heterojunctions using in situ annealing. Applied Physics Letters, 99 (20). 203101pp. doi:10.1063/1.3662009
Lind, Erik, Niquet, Yann-Michel, Mera, Hector, Wernersson, Lars-Erik (2010) Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors. Applied Physics Letters, 96 (23). 233507pp. doi:10.1063/1.3449559
Nilsson, Henrik A., Thelander, Claes, Fröberg, Linus E., Wagner, Jakob B., Samuelson, Lars (2006) Nanowire-based multiple quantum dot memory. Applied Physics Letters, 89 (16). 163101pp. doi:10.1063/1.2362594
 
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