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Hall, C. R., Dao, L. V., Koike, K., Sasa, S., Tan, H. H., Inoue, M., Yano, M., Jagadish, C., Davis, J. A. (2010) Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field. Applied Physics Letters, 96 (19). 193117pp. doi:10.1063/1.3428430

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Reference TypeJournal (article/letter/editorial)
TitleUsing graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field
JournalApplied Physics Letters
AuthorsHall, C. R.Author
Dao, L. V.Author
Koike, K.Author
Sasa, S.Author
Tan, H. H.Author
Inoue, M.Author
Yano, M.Author
Jagadish, C.Author
Davis, J. A.Author
Year2010 (May 10)Volume96
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3428430Search in ResearchGate
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Mindat Ref. ID8583359Long-form Identifiermindat:1:5:8583359:7
GUID0
Full ReferenceHall, C. R., Dao, L. V., Koike, K., Sasa, S., Tan, H. H., Inoue, M., Yano, M., Jagadish, C., Davis, J. A. (2010) Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field. Applied Physics Letters, 96 (19). 193117pp. doi:10.1063/1.3428430
Plain TextHall, C. R., Dao, L. V., Koike, K., Sasa, S., Tan, H. H., Inoue, M., Yano, M., Jagadish, C., Davis, J. A. (2010) Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field. Applied Physics Letters, 96 (19). 193117pp. doi:10.1063/1.3428430
In(2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing

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Hall, C. R., Dao, L., Koike, K., Sasa, S., Tan, H. H., Inoue, M., Yano, M., Hannaford, P., Jagadish, C., Davis, J. A. (2009) Recombination dynamics and screening of the internal electric field inZnO/ZnxMg1−xOmultiple quantum wells. Physical Review B, 80 (23) doi:10.1103/physrevb.80.235316
Davis, Jeffrey A., Van Dao, Lap, Wen, Xiaoming, Hannaford, Peter, Coleman, V. A., Tan, H. H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., Yano, M. (2006) Observation of coherent biexcitons in ZnO∕ZnMgO multiple quantum wells at room temperature. Applied Physics Letters, 89 (18). 182109pp. doi:10.1063/1.2372747
Wen, Xiaoming, Davis, Jeffrey A., Van Dao, Lap, Hannaford, Peter, Coleman, V. A., Tan, H. H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., Yano, M. (2007) Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO∕ZnMgO multiple quantum wells. Applied Physics Letters, 90 (22). 221914pp. doi:10.1063/1.2745264
Davis, J. A., Hall, C. R., Dao, L. V., Nugent, K. A., Quiney, H. M., Tan, H. H., Jagadish, C. (2011) Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells. The Journal of Chemical Physics, 135 (4). 44510pp. doi:10.1063/1.3613679
Wen, Xiaoming, Davis, J.A., Dao, L.V., Hannaford, P., Coleman, V.A., Tan, H.H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., Yano, M. (2009) Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing. Journal of Luminescence, 129 (2) 153-157 doi:10.1016/j.jlumin.2008.09.006
Zubiaga, A., Tuomisto, F., Coleman, V. A., Tan, H. H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., Yano, M. (2008) Mechanisms of electrical isolation inO+-irradiated ZnO. Physical Review B, 78 (3) doi:10.1103/physrevb.78.035125
Dao, L. V., Gal, M., Tan, H., Jagadish, C. (1998) Carrier capture into InGaAs/GaAs quantum wells via impurity mediated resonant tunneling. Applied Physics Letters, 72 (16). 2008-2010 doi:10.1063/1.121248
Dao, L. V., Johnston, M. B., Gal, M., Fu, L., Tan, H. H., Jagadish, C. (1998) Improved carrier collection in intermixed InGaAs/GaAs quantum wells. Applied Physics Letters, 73 (23). 3408-3410 doi:10.1063/1.122780
Kucheyev, S. O., Deenapanray, P. N. K., Jagadish, C., Williams, J. S., Yano, Mitsuaki, Koike, Kazuto, Sasa, Shigehiko, Inoue, Masataka, Ogata, Ken-ichi (2002) Electrical isolation of ZnO by ion bombardment. Applied Physics Letters, 81 (18). 3350-3352 doi:10.1063/1.1518560
Koike, Kazuto, Nakashima, Ippei, Hashimoto, Kazuyuki, Sasa, Shigehiko, Inoue, Masataka, Yano, Mitsuaki (2005) Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy. Applied Physics Letters, 87 (11). 112106pp. doi:10.1063/1.2045558
Kucheyev, S. O., Jagadish, C., Williams, J. S., Deenapanray, P. N. K., Yano, Mitsuaki, Koike, Kazuto, Sasa, Shigehiko, Inoue, Masataka, Ogata, Ken-ichi (2003) Implant isolation of ZnO. Journal of Applied Physics, 93 (5). 2972-2976 doi:10.1063/1.1542939
 
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