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Gan, H. D., Ikeda, S., Shiga, W., Hayakawa, J., Miura, K., Yamamoto, H., Hasegawa, H., Matsukura, F., Ohkubo, T., Hono, K., Ohno, H. (2010) Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions. Applied Physics Letters, 96 (19). 192507pp. doi:10.1063/1.3429594

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Reference TypeJournal (article/letter/editorial)
TitleTunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
JournalApplied Physics Letters
AuthorsGan, H. D.Author
Ikeda, S.Author
Shiga, W.Author
Hayakawa, J.Author
Miura, K.Author
Yamamoto, H.Author
Hasegawa, H.Author
Matsukura, F.Author
Ohkubo, T.Author
Hono, K.Author
Ohno, H.Author
Year2010 (May 10)Volume96
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3429594Search in ResearchGate
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Mindat Ref. ID8583422Long-form Identifiermindat:1:5:8583422:2
GUID0
Full ReferenceGan, H. D., Ikeda, S., Shiga, W., Hayakawa, J., Miura, K., Yamamoto, H., Hasegawa, H., Matsukura, F., Ohkubo, T., Hono, K., Ohno, H. (2010) Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions. Applied Physics Letters, 96 (19). 192507pp. doi:10.1063/1.3429594
Plain TextGan, H. D., Ikeda, S., Shiga, W., Hayakawa, J., Miura, K., Yamamoto, H., Hasegawa, H., Matsukura, F., Ohkubo, T., Hono, K., Ohno, H. (2010) Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions. Applied Physics Letters, 96 (19). 192507pp. doi:10.1063/1.3429594
In(2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing

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Mizunuma, K., Ikeda, S., Park, J. H., Yamamoto, H., Gan, H., Miura, K., Hasegawa, H., Hayakawa, J., Matsukura, F., Ohno, H. (2009) MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers. Applied Physics Letters, 95 (23). 232516pp. doi:10.1063/1.3265740
Mizunuma, K., Ikeda, S., Sato, H., Yamanouchi, M., Gan, H.D., Miura, K., Yamamoto, H., Hayakawa, J., Matsukura, F., Ohno, H. (2011) Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures. Journal of Applied Physics, 109 (7). 7pp. doi:10.1063/1.3554092
Gan, H. D., Sato, H., Yamanouchi, M., Ikeda, S., Miura, K., Koizumi, R., Matsukura, F., Ohno, H. (2011) Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions. Applied Physics Letters, 99 (25). 252507pp. doi:10.1063/1.3671669
Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H. D., Endo, M., Kanai, S., Hayakawa, J., Matsukura, F., Ohno, H. (2010) A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nature Materials, 9 (9). 721-724 doi:10.1038/nmat2804
Ikeda, S., Hayakawa, J., Lee, Y. M., Tanikawa, T., Matsukura, F., Ohno, H. (2006) Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers. Journal of Applied Physics, 99 (8). 8pp. doi:10.1063/1.2176588
Kodzuka, M., Ohkubo, T., Hono, K., Ikeda, S., Gan, H. D., Ohno, H. (2012) Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions. Journal of Applied Physics, 111 (4). 43913pp. doi:10.1063/1.3688039
Sato, H., Yamanouchi, M., Miura, K., Ikeda, S., Gan, H. D., Mizunuma, K., Koizumi, R., Matsukura, F., Ohno, H. (2011) Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Applied Physics Letters, 99 (4). 42501pp. doi:10.1063/1.3617429
Lee, Y. M., Hayakawa, J., Ikeda, S., Matsukura, F., Ohno, H. (2007) Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier. Applied Physics Letters, 90 (21). 212507pp. doi:10.1063/1.2742576
Hayakawa, J., Ikeda, S., Lee, Y. M., Matsukura, F., Ohno, H. (2006) Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕MgO∕CoFeB magnetic tunnel junctions. Applied Physics Letters, 89 (23). 232510pp. doi:10.1063/1.2402904
Lee, Y. M., Hayakawa, J., Ikeda, S., Matsukura, F., Ohno, H. (2006) Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer. Applied Physics Letters, 89 (4). 42506pp. doi:10.1063/1.2234720
Ikeda, S., Hayakawa, J., Ashizawa, Y., Lee, Y. M., Miura, K., Hasegawa, H., Tsunoda, M., Matsukura, F., Ohno, H. (2008) Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature. Applied Physics Letters, 93 (8). 82508pp. doi:10.1063/1.2976435
 
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