Shibuya, Keisuke, Kawasaki, Masashi, Tokura, Yoshinori (2010) Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films. Applied Physics Letters, 96 (2). 22102pp. doi:10.1063/1.3291053
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films | ||
Journal | Applied Physics Letters | ||
Authors | Shibuya, Keisuke | Author | |
Kawasaki, Masashi | Author | ||
Tokura, Yoshinori | Author | ||
Year | 2010 (January 11) | Volume | 96 |
Issue | 2 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3291053Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8583547 | Long-form Identifier | mindat:1:5:8583547:0 |
GUID | 0 | ||
Full Reference | Shibuya, Keisuke, Kawasaki, Masashi, Tokura, Yoshinori (2010) Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films. Applied Physics Letters, 96 (2). 22102pp. doi:10.1063/1.3291053 | ||
Plain Text | Shibuya, Keisuke, Kawasaki, Masashi, Tokura, Yoshinori (2010) Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films. Applied Physics Letters, 96 (2). 22102pp. doi:10.1063/1.3291053 | ||
In | (2010, January) Applied Physics Letters Vol. 96 (2) AIP Publishing |
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