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Wong, C. P., Kasim, J., Liu, J. P., See, A., Shen, Z. X. (2010) Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy. Applied Physics Letters, 96 (21). 213513pp. doi:10.1063/1.3431295

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Reference TypeJournal (article/letter/editorial)
TitleChannel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy
JournalApplied Physics Letters
AuthorsWong, C. P.Author
Kasim, J.Author
Liu, J. P.Author
See, A.Author
Shen, Z. X.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3431295Search in ResearchGate
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Mindat Ref. ID8583806Long-form Identifiermindat:1:5:8583806:0
GUID0
Full ReferenceWong, C. P., Kasim, J., Liu, J. P., See, A., Shen, Z. X. (2010) Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy. Applied Physics Letters, 96 (21). 213513pp. doi:10.1063/1.3431295
Plain TextWong, C. P., Kasim, J., Liu, J. P., See, A., Shen, Z. X. (2010) Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy. Applied Physics Letters, 96 (21). 213513pp. doi:10.1063/1.3431295
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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Wong, Choun Pei, Liu, Jinping, Kasim, Johnson, See, Alex, Shen, Ze Xiang (2011) Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain. Japanese Journal of Applied Physics, 50 (4) 40208 doi:10.1143/jjap.50.040208
Wong, Choun Pei, Liu, Jinping, Kasim, Johnson, See, Alex, Shen, Ze Xiang (2011) Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain. Japanese Journal of Applied Physics, 50 (4) 40208 doi:10.7567/jjap.50.040208
Liu, J. P., Li, K., Pandey, S. M., Benistant, F. L., See, A., Zhou, M. S., Hsia, L. C., Schampers, Ruud, Klenov, Dmitri O. (2008) Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain. Applied Physics Letters, 93 (22). 221912pp. doi:10.1063/1.3040323
Liu, J. P., Li, J., See, A., Zhou, M. S., Hsia, L. C. (2007) Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Applied Physics Letters, 90 (26). 261915pp. doi:10.1063/1.2749868
Wang, C., Snyder, John P., Tucker, J. R. (1999) Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 74 (8). 1174-1176 doi:10.1063/1.123477
Koh, Shao-Ming, Samudra, Ganesh S., Yeo, Yee-Chia (2010) Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters, 97 (3). 32111pp. doi:10.1063/1.3465661
Liu, P., Chen, T. P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C. (2013) Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias. Applied Physics Letters, 103 (20). 202110pp. doi:10.1063/1.4830368
Holtz, M., Carty, J. C., Duncan, W. M. (1999) Ultraviolet Raman stress mapping in silicon. Applied Physics Letters, 74 (14). 2008-2010 doi:10.1063/1.123729
Murray, Conal E., Ren, Z., Ying, A., Polvino, S. M., Noyan, I. C., Cai, Z. (2009) Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions. Applied Physics Letters, 94 (6). 63502pp. doi:10.1063/1.3079656
Hsieh, E. R., Chung, Steve S. (2010) The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (9). 93501pp. doi:10.1063/1.3340926
Bagnell, M., Davila-Rodriguez, J., Ardey, A., Delfyett, P. J. (2010) Dispersion measurements of a 1.3 μm quantum dot semiconductor optical amplifier over 120 nm of spectral bandwidth. Applied Physics Letters, 96 (21). 211907pp. doi:10.1063/1.3430742
 
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