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Zhang, Jiayong, Wang, Xiaofeng, Wang, Xiaodong, Ma, Huili, Cheng, Kaifang, Fan, Zhongchao, Li, Yan, Ji, An, Yang, Fuhua (2010) Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application. Applied Physics Letters, 96 (21). 213505pp. doi:10.1063/1.3431297

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Reference TypeJournal (article/letter/editorial)
TitleFully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
JournalApplied Physics Letters
AuthorsZhang, JiayongAuthor
Wang, XiaofengAuthor
Wang, XiaodongAuthor
Ma, HuiliAuthor
Cheng, KaifangAuthor
Fan, ZhongchaoAuthor
Li, YanAuthor
Ji, AnAuthor
Yang, FuhuaAuthor
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3431297Search in ResearchGate
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Mindat Ref. ID8583807Long-form Identifiermindat:1:5:8583807:9
GUID0
Full ReferenceZhang, Jiayong, Wang, Xiaofeng, Wang, Xiaodong, Ma, Huili, Cheng, Kaifang, Fan, Zhongchao, Li, Yan, Ji, An, Yang, Fuhua (2010) Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application. Applied Physics Letters, 96 (21). 213505pp. doi:10.1063/1.3431297
Plain TextZhang, Jiayong, Wang, Xiaofeng, Wang, Xiaodong, Ma, Huili, Cheng, Kaifang, Fan, Zhongchao, Li, Yan, Ji, An, Yang, Fuhua (2010) Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application. Applied Physics Letters, 96 (21). 213505pp. doi:10.1063/1.3431297
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing


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