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Lei, W., Tan, H. H., Jagadish, C. (2010) Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer. Applied Physics Letters, 96 (21). 213102pp. doi:10.1063/1.3436562

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
JournalApplied Physics Letters
AuthorsLei, W.Author
Tan, H. H.Author
Jagadish, C.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3436562Search in ResearchGate
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Mindat Ref. ID8583909Long-form Identifiermindat:1:5:8583909:6
GUID0
Full ReferenceLei, W., Tan, H. H., Jagadish, C. (2010) Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer. Applied Physics Letters, 96 (21). 213102pp. doi:10.1063/1.3436562
Plain TextLei, W., Tan, H. H., Jagadish, C. (2010) Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer. Applied Physics Letters, 96 (21). 213102pp. doi:10.1063/1.3436562
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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Lei, W, Tan, H H, Jagadish, C (2010) Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers. Journal of Physics D: Applied Physics, 43. 302001pp. doi:10.1088/0022-3727/43/30/302001
Lei, W., Tan, H. H., Jagadish, C. (2009) Formation and shape control of InAsSb/InP (001) nanostructures. Applied Physics Letters, 95 (1). 13108pp. doi:10.1063/1.3160738
Lei, W., Tan, H. H., Jagadish, C. (2013) Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique. Applied Physics Letters, 102 (3). 33111pp. doi:10.1063/1.4789513
Lei, W., Tan, H. H., Jagadish, C. (2009) Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures. Applied Physics Letters, 95 (14). 143124pp. doi:10.1063/1.3246165
Lei, W., Tan, H. H., Jagadish, C. (2011) Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure. Applied Physics Letters, 99 (19). 193110pp. doi:10.1063/1.3659695
Lei, W., Tan, H. H., Jagadish, C., Ren, Q. J., Lu, J., Chen, Z. H. (2010) Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition. Applied Physics Letters, 97 (22). 223108pp. doi:10.1063/1.3522889
Cheng, T.-H., Peng, K.-L., Ko, C.-Y., Chen, C.-Y., Lan, H.-S., Wu, Y.-R., Liu, C. W., Tseng, H.-H. (2010) Strain-enhanced photoluminescence from Ge direct transition. Applied Physics Letters, 96 (21). 211108pp. doi:10.1063/1.3429085
Jolley, G., Faraone, L., Fu, L., Lu, H. F., Tan, H. H., Jagadish, C. (2013) A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination. Applied Physics Letters, 102 (21). 213903pp. doi:10.1063/1.4807506
Dao, L. V., Gal, M., Tan, H., Jagadish, C. (1998) Carrier capture into InGaAs/GaAs quantum wells via impurity mediated resonant tunneling. Applied Physics Letters, 72 (16). 2008-2010 doi:10.1063/1.121248
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Steenbergen, E. H., Elhamri, S., Mitchel, W. C., Mou, Shin, Brown, G. J. (2014) Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices. Applied Physics Letters, 104 (1). 11104pp. doi:10.1063/1.4861159
 
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