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O’Regan, T. P., Hurley, P. K., Sorée, B., Fischetti, M. V. (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. Applied Physics Letters, 96 (21). 213514pp. doi:10.1063/1.3436645

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Reference TypeJournal (article/letter/editorial)
TitleModeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
JournalApplied Physics Letters
AuthorsO’Regan, T. P.Author
Hurley, P. K.Author
Sorée, B.Author
Fischetti, M. V.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3436645Search in ResearchGate
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Mindat Ref. ID8583914Long-form Identifiermindat:1:5:8583914:8
GUID0
Full ReferenceO’Regan, T. P., Hurley, P. K., Sorée, B., Fischetti, M. V. (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. Applied Physics Letters, 96 (21). 213514pp. doi:10.1063/1.3436645
Plain TextO’Regan, T. P., Hurley, P. K., Sorée, B., Fischetti, M. V. (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. Applied Physics Letters, 96 (21). 213514pp. doi:10.1063/1.3436645
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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O’Regan, T. P., Hurley, P. K. (2011) Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures. Applied Physics Letters, 99 (16). 163502pp. doi:10.1063/1.3652699
O'Connor, É., Cherkaoui, K., Monaghan, S., Sheehan, B., Povey, I. M., Hurley, P. K. (2017) Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration. Applied Physics Letters, 110 (3). 32902pp. doi:10.1063/1.4973971
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