| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors |
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| Journal | Applied Physics Letters |
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| Authors | Shi, Tongfei | Author |
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| Xiao, Zhenguo | Author |
| Yin, Zhijun | Author |
| Li, Xinhua | Author |
| Wang, Yuqi | Author |
| He, Hongtao | Author |
| Wang, Jiannong | Author |
| Yan, Wenshen | Author |
| Wei, Shiqiang | Author |
| Year | 2010 (May 24) | Volume | 96 |
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| Issue | 21 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.3437082Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8583920 | Long-form Identifier | mindat:1:5:8583920:9 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Shi, Tongfei, Xiao, Zhenguo, Yin, Zhijun, Li, Xinhua, Wang, Yuqi, He, Hongtao, Wang, Jiannong, Yan, Wenshen, Wei, Shiqiang (2010) The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors. Applied Physics Letters, 96 (21). 211905pp. doi:10.1063/1.3437082 |
|---|
| Plain Text | Shi, Tongfei, Xiao, Zhenguo, Yin, Zhijun, Li, Xinhua, Wang, Yuqi, He, Hongtao, Wang, Jiannong, Yan, Wenshen, Wei, Shiqiang (2010) The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors. Applied Physics Letters, 96 (21). 211905pp. doi:10.1063/1.3437082 |
|---|
| In | (2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing |
|---|
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