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Zakhar’in, A. O., Andrianov, A. V., Egorov, A. Yu., Zinov’ev, N. N. (2010) Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation. Applied Physics Letters, 96 (21). 211118pp. doi:10.1063/1.3441401

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Reference TypeJournal (article/letter/editorial)
TitleTerahertz photoluminescence from GaAs doped with shallow donors at interband excitation
JournalApplied Physics Letters
AuthorsZakhar’in, A. O.Author
Andrianov, A. V.Author
Egorov, A. Yu.Author
Zinov’ev, N. N.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3441401Search in ResearchGate
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Mindat Ref. ID8583946Long-form Identifiermindat:1:5:8583946:7
GUID0
Full ReferenceZakhar’in, A. O., Andrianov, A. V., Egorov, A. Yu., Zinov’ev, N. N. (2010) Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation. Applied Physics Letters, 96 (21). 211118pp. doi:10.1063/1.3441401
Plain TextZakhar’in, A. O., Andrianov, A. V., Egorov, A. Yu., Zinov’ev, N. N. (2010) Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation. Applied Physics Letters, 96 (21). 211118pp. doi:10.1063/1.3441401
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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