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Che, Y. L., Pelz, J. P. (2010) Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers. Applied Physics Letters, 96 (24). 242106pp. doi:10.1063/1.3453866

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Reference TypeJournal (article/letter/editorial)
TitleAmbipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers
JournalApplied Physics Letters
AuthorsChe, Y. L.Author
Pelz, J. P.Author
Year2010 (June 14)Volume96
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3453866Search in ResearchGate
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Mindat Ref. ID8584401Long-form Identifiermindat:1:5:8584401:6
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Full ReferenceChe, Y. L., Pelz, J. P. (2010) Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers. Applied Physics Letters, 96 (24). 242106pp. doi:10.1063/1.3453866
Plain TextChe, Y. L., Pelz, J. P. (2010) Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers. Applied Physics Letters, 96 (24). 242106pp. doi:10.1063/1.3453866
In(2010, June) Applied Physics Letters Vol. 96 (24) AIP Publishing

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Im, H.-J., Kaczer, B., Pelz, J. P., Choyke, W. J. (1998) Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC. Applied Physics Letters, 72 (7). 839-841 doi:10.1063/1.120910
Tivarus, C., Pelz, J. P., Hudait, M. K., Ringel, S. A. (2005) Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts. Applied Physics Letters, 87 (18). 182105pp. doi:10.1063/1.2120899
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Kaczer, B., Im, H.-J., Pelz, J. P., Wallace, R. M. (1998) Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy. Applied Physics Letters, 73 (13). 1871-1873 doi:10.1063/1.122310
Tumakha, S., Ewing, D. J., Porter, L. M., Wahab, Q., Ma, X., Sudharshan, T. S., Brillson, L. J. (2005) Defect-driven inhomogeneities in Niāˆ•4Hā€“SiC Schottky barriers. Applied Physics Letters, 87 (24). 242106pp. doi:10.1063/1.2141719
Hecht, M. H., Bell, L. D., Kaiser, W. J., Grunthaner, F. J. (1989) Ballisticā€electronā€emission microscopy investigation of Schottky barrier interface formation. Applied Physics Letters, 55 (8). 780-782 doi:10.1063/1.101778
Park, K.-B., Ding, Y., Pelz, J. P., Neudeck, P. G., Trunek, A. J. (2006) Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy. Applied Physics Letters, 89 (4). 42103pp. doi:10.1063/1.2218302
Cai, W., Stone, S. E., Pelz, J. P., Edge, L. F., Schlom, D. G. (2007) Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3āˆ•Si (111) studied by ballistic electron emission microscopy and internal photoemission. Applied Physics Letters, 91 (4). 42901pp. doi:10.1063/1.2757150
Davies, A., Craighead, H. G. (1994) Ballisticā€electronā€emission microscopy characteristics of reverseā€biased Schottky diodes. Applied Physics Letters, 64 (21). 2833-2835 doi:10.1063/1.111440
Park, K.-B., Pelz, J. P., Grim, J., Skowronski, M. (2005) Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy. Applied Physics Letters, 87 (23). 232103pp. doi:10.1063/1.2138442
 
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