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Weng, X., Tian, W., Schlom, D. G., Dickey, E. C. (2010) Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface. Applied Physics Letters, 96 (24). 241901pp. doi:10.1063/1.3454924

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Reference TypeJournal (article/letter/editorial)
TitleStructure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface
JournalApplied Physics Letters
AuthorsWeng, X.Author
Tian, W.Author
Schlom, D. G.Author
Dickey, E. C.Author
Year2010 (June 14)Volume96
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3454924Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584430Long-form Identifiermindat:1:5:8584430:8
GUID0
Full ReferenceWeng, X., Tian, W., Schlom, D. G., Dickey, E. C. (2010) Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface. Applied Physics Letters, 96 (24). 241901pp. doi:10.1063/1.3454924
Plain TextWeng, X., Tian, W., Schlom, D. G., Dickey, E. C. (2010) Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface. Applied Physics Letters, 96 (24). 241901pp. doi:10.1063/1.3454924
In(2010, June) Applied Physics Letters Vol. 96 (24) AIP Publishing

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Guo, W., Katz, M. B., Nelson, C. T., Heeg, T., Schlom, D. G., Liu, B., Che, Y., Pan, X. Q. (2009) Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers. Applied Physics Letters, 94 (12). 122107pp. doi:10.1063/1.3095506
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Cai, W., Stone, S. E., Pelz, J. P., Edge, L. F., Schlom, D. G. (2007) Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3∕Si (111) studied by ballistic electron emission microscopy and internal photoemission. Applied Physics Letters, 91 (4). 42901pp. doi:10.1063/1.2757150
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