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Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J. (2010) Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96 (25). 253501pp. doi:10.1063/1.3455066

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Reference TypeJournal (article/letter/editorial)
TitleNonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
JournalApplied Physics Letters
AuthorsTschumak, E.Author
Granzner, R.Author
Lindner, J. K. N.Author
Schwierz, F.Author
Lischka, K.Author
Nagasawa, H.Author
Abe, M.Author
As, D. J.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3455066Search in ResearchGate
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Mindat Ref. ID8584518Long-form Identifiermindat:1:5:8584518:5
GUID0
Full ReferenceTschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J. (2010) Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96 (25). 253501pp. doi:10.1063/1.3455066
Plain TextTschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J. (2010) Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96 (25). 253501pp. doi:10.1063/1.3455066
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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Tschumak, Elena, Lindner, J. K. N., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., As, D. J. (2010) Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c), 7 (1). 104-107 doi:10.1002/pssc.200982615
Granzner, R., Tschumak, E., Kittler, M., Tonisch, K., Jatal, W., Pezoldt, J., As, D., Schwierz, F. (2011) Vertical design of cubic GaN-based high electron mobility transistors. Journal of Applied Physics, 110 (11). 114501pp. doi:10.1063/1.3663364
As, D. J., Potthast, S., Fernandez, J., Schörmann, J., Lischka, K., Nagasawa, H., Abe, M. (2006) Ni Schottky diodes on cubic GaN. Applied Physics Letters, 88 (15). 152112pp. doi:10.1063/1.2193401
Kemper, R.M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., Lindner, J.K.N., Lischka, K., As, D.J. (2011) Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth, 323 (1). 84-87 doi:10.1016/j.jcrysgro.2010.12.042
As, D. J., Pöttgen, H., Tschumak, E., Lischka, K. (2010) Electronic properties of nonpolar cubic GaN MOS structures. physica status solidi (c), 7 (7). 1988-1990 doi:10.1002/pssc.200983600
DeCuir, E. A., Manasreh, M. O., Tschumak, Elena, Schörmann, J., As, D. J., Lischka, K. (2008) Cubic GaN∕AlN multiple quantum well photodetector. Applied Physics Letters, 92 (20). 201910pp. doi:10.1063/1.2936279
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Zado, A., Tschumak, E., Lischka, K., As, D. J. (2010) Electrical characterization of an interface n-type conduction channel in cubic GaN/AlGaN heterostructures. physica status solidi (c), 7 (1). 52-55 doi:10.1002/pssc.200982625
Zado, A., Tschumak, E., Gerlach, J.W., Lischka, K., As, D.J. (2011) Carbon as an acceptor in cubic GaN/3C–SiC. Journal of Crystal Growth, 323 (1). 88-90 doi:10.1016/j.jcrysgro.2010.12.044
DeCuir, E. A., Fred, E., Manasreh, M. O., Schörmann, J., As, D. J., Lischka, K. (2007) Near-infrared intersubband absorption in nonpolar cubic GaN∕AlN superlattices. Applied Physics Letters, 91 (4). 41911pp. doi:10.1063/1.2764557
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