Reference Type | Journal (article/letter/editorial) |
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Title | Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions |
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Journal | Applied Physics Letters |
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Authors | Schulze, T. F. | Author |
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Beushausen, H. N. | Author |
Leendertz, C. | Author |
Dobrich, A. | Author |
Rech, B. | Author |
Korte, L. | Author |
Year | 2010 (June 21) | Volume | 96 |
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Issue | 25 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3455900Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8584535 | Long-form Identifier | mindat:1:5:8584535:2 |
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GUID | 0 |
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Full Reference | Schulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L. (2010) Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters, 96 (25). 252102pp. doi:10.1063/1.3455900 |
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Plain Text | Schulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L. (2010) Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters, 96 (25). 252102pp. doi:10.1063/1.3455900 |
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In | (2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing |
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