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Schulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L. (2010) Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters, 96 (25). 252102pp. doi:10.1063/1.3455900

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Reference TypeJournal (article/letter/editorial)
TitleInterplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
JournalApplied Physics Letters
AuthorsSchulze, T. F.Author
Beushausen, H. N.Author
Leendertz, C.Author
Dobrich, A.Author
Rech, B.Author
Korte, L.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3455900Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584535Long-form Identifiermindat:1:5:8584535:2
GUID0
Full ReferenceSchulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L. (2010) Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters, 96 (25). 252102pp. doi:10.1063/1.3455900
Plain TextSchulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L. (2010) Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters, 96 (25). 252102pp. doi:10.1063/1.3455900
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing


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