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Lu, T. M., Lee, C.-H., Tsui, D. C., Liu, C. W. (2010) Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure. Applied Physics Letters, 96 (25). 253103pp. doi:10.1063/1.3456375

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Reference TypeJournal (article/letter/editorial)
TitleIntegration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure
JournalApplied Physics Letters
AuthorsLu, T. M.Author
Lee, C.-H.Author
Tsui, D. C.Author
Liu, C. W.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3456375Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584547Long-form Identifiermindat:1:5:8584547:7
GUID0
Full ReferenceLu, T. M., Lee, C.-H., Tsui, D. C., Liu, C. W. (2010) Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure. Applied Physics Letters, 96 (25). 253103pp. doi:10.1063/1.3456375
Plain TextLu, T. M., Lee, C.-H., Tsui, D. C., Liu, C. W. (2010) Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure. Applied Physics Letters, 96 (25). 253103pp. doi:10.1063/1.3456375
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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Lu, T. M., Lee, C.-H., Huang, S.-H., Tsui, D. C., Liu, C. W. (2011) Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors. Applied Physics Letters, 99 (15). 153510pp. doi:10.1063/1.3652909
Lu, T. M., Tsui, D. C., Lee, C.-H., Liu, C. W. (2009) Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs. Applied Physics Letters, 94 (18). 182102pp. doi:10.1063/1.3127516
Huang, S.-H., Lu, T.-M., Lu, S.-C., Lee, C.-H., Liu, C. W., Tsui, D. C. (2012) Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures. Applied Physics Letters, 101 (4). 42111pp. doi:10.1063/1.4739513
Lu, T. M., Tsui, D. C., Lee, C.-H., Liu, C. W. (2010) Erratum: “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/V s” [Appl. Phys. Lett. 94, 182102 (2009)]. Applied Physics Letters, 97 (5). 59904pp. doi:10.1063/1.3475768
Lu, T. M., Pan, W., Tsui, D. C., Lee, C.-H., Liu, C. W. (2012) Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors. Physical Review B, 85 (12) doi:10.1103/physrevb.85.121307
Melnikov, M. Yu., Shashkin, A. A., Dolgopolov, V. T., Huang, S.-H., Liu, C. W., Kravchenko, S. V. (2015) Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well. Applied Physics Letters, 106 (9). 92102pp. doi:10.1063/1.4914007
Laroche, D., Huang, S.-H., Chuang, Y., Li, J.-Y., Liu, C. W., Lu, T. M. (2016) Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure. Applied Physics Letters, 108 (23). 233504pp. doi:10.1063/1.4953399
Lu, T. M., Sun, L., Tsui, D. C., Lyon, S., Pan, W., Mühlberger, M., Schäffler, F., Liu, J., Xie, Y. H. (2008) In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK. Physical Review B, 78 (23) doi:10.1103/physrevb.78.233309
Lu, T. M., Liu, J., Kim, J., Lai, K., Tsui, D. C., Xie, Y. H. (2007) Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric. Applied Physics Letters, 90 (18). 182114pp. doi:10.1063/1.2736273
Liu, J., Lu, T. M., Kim, J., Lai, K., Tsui, D. C., Xie, Y. H. (2008) The proximity effect of the regrowth interface on two-dimensional electron density in strained Si. Applied Physics Letters, 92 (11). 112113pp. doi:10.1063/1.2899937
Laroche, D., Huang, S.-H., Nielsen, E., Liu, C. W., Li, J.-Y., Lu, T. M. (2015) Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure. Applied Physics Letters, 106 (14). 143503pp. doi:10.1063/1.4917296
 
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