Das, C. R., Dhara, S., Jeng, Yeau-Ren, Tsai, Ping-Chi, Hsu, H. C., Raj, Baldev, Bhaduri, A. K., Albert, S. K., Tyagi, A. K., Chen, L. C., Chen, K. H. (2010) Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Applied Physics Letters, 96 (25). 253113pp. doi:10.1063/1.3456380

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Reference Type	Journal (article/letter/editorial)
Title	Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si
Journal	Applied Physics Letters
Authors	Das, C. R.		Author
	Dhara, S.		Author
	Jeng, Yeau-Ren		Author
	Tsai, Ping-Chi		Author
	Hsu, H. C.		Author
	Raj, Baldev		Author
	Bhaduri, A. K.		Author
	Albert, S. K.		Author
	Tyagi, A. K.		Author
	Chen, L. C.		Author
	Chen, K. H.		Author
Year	2010 (June 21)	Volume	96
Issue	25
Publisher	AIP Publishing
DOI	doi:10.1063/1.3456380Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8584555	Long-form Identifier	mindat:1:5:8584555:6
GUID	0
Full Reference	Das, C. R., Dhara, S., Jeng, Yeau-Ren, Tsai, Ping-Chi, Hsu, H. C., Raj, Baldev, Bhaduri, A. K., Albert, S. K., Tyagi, A. K., Chen, L. C., Chen, K. H. (2010) Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Applied Physics Letters, 96 (25). 253113pp. doi:10.1063/1.3456380
Plain Text	Das, C. R., Dhara, S., Jeng, Yeau-Ren, Tsai, Ping-Chi, Hsu, H. C., Raj, Baldev, Bhaduri, A. K., Albert, S. K., Tyagi, A. K., Chen, L. C., Chen, K. H. (2010) Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Applied Physics Letters, 96 (25). 253113pp. doi:10.1063/1.3456380
In	(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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	Das, C. R., Dhara, S., Hsu, H. C., Chen, L. C., Jeng, Y. R., Bhaduri, A. K., Raj, Baldev, Chen, K. H., Albert, S. K. (2009) The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation. Journal of Raman Spectroscopy, 40 (12). 1881-1884 doi:10.1002/jrs.2336
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