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Zhang, Qi, Qi, Junjie, Yang, Ya, Huang, Yunhua, Li, Xin, Zhang, Yue (2010) Electrical breakdown of ZnO nanowires in metal-semiconductor-metal structure. Applied Physics Letters, 96 (25). 253112pp. doi:10.1063/1.3457169

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Reference TypeJournal (article/letter/editorial)
TitleElectrical breakdown of ZnO nanowires in metal-semiconductor-metal structure
JournalApplied Physics Letters
AuthorsZhang, QiAuthor
Qi, JunjieAuthor
Yang, YaAuthor
Huang, YunhuaAuthor
Li, XinAuthor
Zhang, YueAuthor
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3457169Search in ResearchGate
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Mindat Ref. ID8584600Long-form Identifiermindat:1:5:8584600:5
GUID0
Full ReferenceZhang, Qi, Qi, Junjie, Yang, Ya, Huang, Yunhua, Li, Xin, Zhang, Yue (2010) Electrical breakdown of ZnO nanowires in metal-semiconductor-metal structure. Applied Physics Letters, 96 (25). 253112pp. doi:10.1063/1.3457169
Plain TextZhang, Qi, Qi, Junjie, Yang, Ya, Huang, Yunhua, Li, Xin, Zhang, Yue (2010) Electrical breakdown of ZnO nanowires in metal-semiconductor-metal structure. Applied Physics Letters, 96 (25). 253112pp. doi:10.1063/1.3457169
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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